{"id":487,"date":"2017-02-09T12:06:21","date_gmt":"2017-02-09T20:06:21","guid":{"rendered":"https:\/\/www.ece.ucsb.edu\/ipl\/?p=487"},"modified":"2018-11-28T14:16:50","modified_gmt":"2018-11-28T22:16:50","slug":"template-assisted-selective-epitaxy-via-mocvd","status":"publish","type":"post","link":"https:\/\/web.ece.ucsb.edu\/ipl\/2017\/02\/template-assisted-selective-epitaxy-via-mocvd\/","title":{"rendered":"Template Assisted Selective Epitaxy"},"content":{"rendered":"<p>We are pursuing a unique selective area growth technique in 3D confined nano-structured templates called TASE (template assisted selective epitaxy) using our in-house metalorganic chemical vapor deposition (MOCVD) system. Fabrication of channel-like nanometer-scale horizontal structures allows for the selective deposition and lateral growth of group III-V semiconductor materials . Under a project led by Prof. Mark Rodwell, we are applying this approach to develop novel low power electronic devices including horizontal heterojunction-based tunnel field effect transistors (TFETs).<\/p>\n<p>&nbsp;<\/p>\n<p><b><img loading=\"lazy\" class=\"alignnone wp-image-494\" src=\"https:\/\/www.ece.ucsb.edu\/ipl\/wp-content\/uploads\/image3-283x300.png\" alt=\"\" width=\"170\" height=\"180\" srcset=\"https:\/\/web.ece.ucsb.edu\/ipl\/wp-content\/uploads\/image3-283x300.png 283w, https:\/\/web.ece.ucsb.edu\/ipl\/wp-content\/uploads\/image3.png 549w\" sizes=\"(max-width: 170px) 100vw, 170px\" \/>\u00a0\u00a0\u00a0\u00a0 <img loading=\"lazy\" class=\"alignnone wp-image-493\" src=\"https:\/\/www.ece.ucsb.edu\/ipl\/wp-content\/uploads\/image2-300x224.png\" alt=\"\" width=\"241\" height=\"180\" srcset=\"https:\/\/web.ece.ucsb.edu\/ipl\/wp-content\/uploads\/image2-300x224.png 300w, https:\/\/web.ece.ucsb.edu\/ipl\/wp-content\/uploads\/image2-1024x765.png 1024w, https:\/\/web.ece.ucsb.edu\/ipl\/wp-content\/uploads\/image2.png 1072w\" sizes=\"(max-width: 241px) 100vw, 241px\" \/>\u00a0\u00a0\u00a0\u00a0 <img loading=\"lazy\" class=\"alignnone wp-image-492\" src=\"https:\/\/www.ece.ucsb.edu\/ipl\/wp-content\/uploads\/image1-300x280.png\" alt=\"\" width=\"192\" height=\"180\" \/><br \/>\n<\/b><\/p>\n<p><b>Selected Relevant Publications:<\/b><\/p>\n<ol>\n<li>&#8220;Template assisted selective epitaxy of InP via MOVPE towards horizontal heterojunctions for tunnel field effect transistors,&#8221; <a href=\"https:\/\/books.google.it\/books?id=lPIxDwAAQBAJ&amp;printsec=frontcover#v=onepage&amp;q&amp;f=false\" target=\"_blank\" rel=\"noopener\">ICMOVPE XIX, 2018<\/a>.<\/li>\n<\/ol>\n<p><em><b>Collaborators:\u00a0<\/b><\/em><\/p>\n<p><em>Mark Rodwell Group (UCSB), Chris Palmstr\u00f8m Group (UCSB)<\/em><\/p>\n","protected":false},"excerpt":{"rendered":"<p>We are pursuing a unique selective area growth technique in 3D confined nano-structured templates called TASE (template assisted selective epitaxy) using our in-house metalorganic chemical vapor deposition (MOCVD) system. Fabrication of channel-like nanometer-scale horizontal structures allows for the selective deposition and lateral growth of group III-V semiconductor materials . Under a project led by Prof.&hellip;<\/p>\n","protected":false},"author":4,"featured_media":539,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[9],"tags":[],"_links":{"self":[{"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/posts\/487"}],"collection":[{"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/users\/4"}],"replies":[{"embeddable":true,"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/comments?post=487"}],"version-history":[{"count":10,"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/posts\/487\/revisions"}],"predecessor-version":[{"id":538,"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/posts\/487\/revisions\/538"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/media\/539"}],"wp:attachment":[{"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/media?parent=487"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/categories?post=487"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/web.ece.ucsb.edu\/ipl\/wp-json\/wp\/v2\/tags?post=487"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}