#revised on 2012-01-04 For SOA B Design
from jaredwave import *
import time

# Set Parameters

set_working_directory('./')
set_eval_type('n_eff')
set_mode_finder_type('stable')
set_mode_solver('vectorial FMM real')
lam0 = 1.58 # expected center wavelength to be compatible with IPHOD waveguide
set_wavelength(lam0)
set_N_1d(100)
set_N(1)

# Project Node
project = 'HW_SOA_D';
SOA12_prj = Project(project + '_prj')
SOA12_prj.buildNode()
top_prj = SOA12_prj;

# Structure Definition
w_Dev = 14;

w_nInP = w_Dev;
w_SL = w_nInP;
w_bondOxide = w_nInP;

w_Mesa = w_Dev;
w_pInP = w_Mesa;
w_ESL = w_Mesa; # etch stop layer
w_pInP2 = w_Mesa

w_MQW = w_Mesa;
w_pEBL = w_MQW
w_pSCH = w_MQW;
w_nSCH = w_MQW;
w_nEBL = w_Dev;

w_Si_ridge = 1.0; # ridge waveguide width
w_Si_slab = w_Dev;
w_SiO2 = w_Dev;

#h_pContact = 0.1; #ignore
h_well = 0.006;
h_barrier = 0.009;
Num_well = 7;
Num_barrier = Num_well+1;
h_MQW = h_well*Num_well + h_barrier*Num_barrier;
h_pSCH = 0.1;
h_nSCH = 0.1;
h_ESL = 0.05;
h_EBL = 0.05;

h_pInP = 1.5;
h_pInP2 = 0.05; # the layer between the EBL and ESL
h_nInP = 0.110;
h_SL = 0.03
h_bondOxide = 0.01;
h_Si_ridge = 0.25; # etch depth
h_Si_slab = 0.5-h_Si_ridge;
h_SiO2 = 1;
h_air = 0.1;

# Material definition
n_SU8 = 1.57;  #1.55
n_Si = 3.47533; #1.58
n_SiO2 = 1.44366; #1.58
n_Air = 1;
#n_InGaAs = 3.726156 #
n_InP = 3.163766428  #1.58
#n_pSCH_ext = 3.252083918903392 #GRIN-SCH  exteral side  In(0.53)Al(x)Ga(0.47-x)As x=0.44->0.155
n_pSCH_ext = 3.316115558669745 #GRIN-SCH  exteral side  In(0.53)Al(x)Ga(0.47-x)As x=0.34->0.155
n_pSCH_int = 3.4544666 # GRIN-SCH  interal side x=0.155

n_nSCH_int = n_pSCH_int	 #
n_nSCH_ext = n_pSCH_ext

n_well = 3.635223413  #In(0.6758)Al(0.06)Ga(0.2642)As  1.58um
n_barrier = 3.494023939 # In(0.4411)Al(0.085)Ga(0.4739)As  1.58um
n_MQW = sqrt((n_well*n_well*h_well*Num_well+n_barrier*n_barrier*h_barrier*Num_barrier)/h_MQW);

n_InGaAsP = 3.2876027240668 #In(0.85)Ga(0.15)As(0.327)P(0.673) 1.58um
n_bondOixde = 1.6 #approximation
n_SL = sqrt(0.5*(n_InGaAsP*n_InGaAsP+n_InP*n_InP))
n_pInP = n_InP
n_nInP = n_InP   

n_ESL = 3.243242483 # In(0.9029)Ga(0.0971)As(0.213)P(0.787) 1.58
n_EBL = 3.237747466 # In(0.52)Al(0.48)As

m_SU8 = Material(n_SU8)
m_Si = Material(n_Si)
m_air = Material(n_Air)
m_SiO2 = Material(n_SiO2)
m_pInP = Material(n_pInP);
m_nInP = Material(n_nInP);
m_MQW = Material(n_MQW);
m_SL = Material(n_SL)

m_pSCH_ext = Material(n_pSCH_ext);
m_pSCH_mid = Material((n_pSCH_ext+n_pSCH_int)*0.5);
m_pSCH_int = Material(n_pSCH_int)

m_nSCH_ext = Material(n_nSCH_ext);
m_nSCH_mid = Material((n_nSCH_ext+n_nSCH_int)*0.5);
m_nSCH_int = Material(n_nSCH_int)

m_ESL = Material(n_ESL)
m_EBL = Material(n_EBL)
m_bondOxide = Material(n_bondOixde);


bndry = 'PEC';
set_top_boundary(bndry)
set_bottom_boundary(bndry)
set_right_boundary(bndry)
set_left_boundary(bndry)

f = open(project + '.out','a')
f.write('wavelength = '+str(lam0)+' \mum'+'\n')

s_air = Slice(m_air(w_Dev));
## replace InGaAs by pInP
#s_pContact = Slice(m_SU8(w_Dev/2-w_pContact/2) + m_pInP(w_pContact) + m_SU8(w_Dev/2-w_pContact/2));
if w_pInP<w_Dev:
  s_pInP = Slice(m_SU8(0.5*(w_Dev-w_pInP)) + m_pInP(w_pInP) + m_SU8(0.5*(w_Dev-w_pInP)) );
else:
  s_pInP = Slice(m_pInP(w_Dev) );
  
if w_ESL < w_Dev:
  s_ESL = Slice( m_SU8(0.5*(w_Dev-w_ESL)) + m_ESL(w_ESL) + m_SU8(0.5*(w_Dev-w_ESL)) )
else:
  s_ESL = Slice(m_ESL(w_Dev) )
  
if w_pInP2<w_Dev:
  s_pInP2 = Slice(m_SU8(0.5*(w_Dev-w_pInP2)) + m_pInP(w_pInP2) + m_SU8(0.5*(w_Dev-w_pInP2)) );
else:
  s_pInP2 = Slice(m_pInP(w_Dev) );  
  
if w_pEBL < w_Dev:
  s_pEBL = Slice( m_SU8(0.5*(w_Dev-w_pEBL)) + m_EBL(w_pEBL) + m_SU8(0.5*(w_Dev-w_pEBL)) )
else:
  s_pEBL = Slice(m_EBL(w_Dev) )

if w_nEBL < w_Dev:
  s_nEBL = Slice( m_SU8(0.5*(w_Dev-w_nEBL)) + m_EBL(w_nEBL) + m_SU8(0.5*(w_Dev-w_nEBL)) )
else:
  s_nEBL = Slice(m_EBL(w_Dev) )
  
if w_pSCH < w_Dev:
  s_pSCH_ext = Slice(m_SU8(0.5*(w_Dev-w_pSCH)) + m_pSCH_ext(w_pSCH) + m_SU8(0.5*(w_Dev-w_pSCH)) );
  s_pSCH_mid = Slice(m_SU8(0.5*(w_Dev-w_pSCH)) + m_pSCH_mid(w_pSCH) + m_SU8(0.5*(w_Dev-w_pSCH)) );
  s_pSCH_int = Slice(m_SU8(0.5*(w_Dev-w_pSCH)) + m_pSCH_int(w_pSCH) + m_SU8(0.5*(w_Dev-w_pSCH)) );
else:
  s_pSCH_ext = Slice(m_pSCH_ext(w_Dev) );
  s_pSCH_mid = Slice(m_pSCH_mid(w_Dev) );
  s_pSCH_int = Slice(m_pSCH_int(w_Dev) );

if w_MQW < w_Dev:
  s_MQW = Slice(m_SU8(0.5*(w_Dev-w_MQW)) + m_MQW(w_MQW) + m_SU8(0.5*(w_Dev-w_MQW)) );
else:
  s_MQW = Slice(m_MQW(w_Dev) );

if w_nSCH < w_Dev:
  s_nSCH_ext = Slice(m_SU8(0.5*(w_Dev-w_nSCH)) + m_nSCH_ext(w_nSCH) + m_SU8(0.5*(w_Dev-w_nSCH)) );
  s_nSCH_mid = Slice(m_SU8(0.5*(w_Dev-w_nSCH)) + m_nSCH_mid(w_nSCH) + m_SU8(0.5*(w_Dev-w_nSCH)) );
  s_nSCH_int = Slice(m_SU8(0.5*(w_Dev-w_nSCH)) + m_nSCH_int(w_nSCH) + m_SU8(0.5*(w_Dev-w_nSCH)) );
else:
  s_nSCH_ext = Slice(m_nSCH_ext(w_Dev) );
  s_nSCH_mid = Slice(m_nSCH_mid(w_Dev) );
  s_nSCH_int = Slice(m_nSCH_int(w_Dev) );
  
if w_nInP < w_Dev:
  s_nInP = Slice(m_SU8(0.5*(w_Dev-w_nInP)) + m_nInP(w_nInP) + m_SU8(0.5*(w_Dev-w_nInP)) );
else:
  s_nInP = Slice(m_nInP(w_Dev));
  
if w_SL < w_Dev:
  s_SL = Slice(m_SU8(0.5*(w_Dev-w_SL) ) + m_SL(w_SL) + m_SU8(0.5*(w_Dev-w_SL) ) );
else:
  s_SL = Slice(m_SL(w_SL));

if w_bondOxide < w_Dev:
  s_bondOxide = Slice(m_SU8(0.5*(w_Dev-w_bondOxide)) + m_bondOxide(h_bondOxide) + m_SU8(0.5*(w_Dev-w_bondOxide)) );
else:  
  s_bondOxide = Slice(m_bondOxide(h_bondOxide));
  
s_Si_ridge = Slice(m_air(0.5*(w_Dev-w_Si_ridge)) + m_Si(w_Si_ridge) + m_air(0.5*(w_Dev-w_Si_ridge)));
s_Si_slab = Slice(m_Si(w_Si_slab));
s_SiO2 = Slice(m_SiO2(w_SiO2));

strip = Waveguide(s_air(h_air)
                 +s_pInP(h_pInP)
                 +s_ESL(h_ESL)
                 +s_pInP2(h_pInP2)
                 #+s_pEBL(h_EBL)
                 +s_pSCH_ext(h_pSCH/3.0)
                 +s_pSCH_mid(h_pSCH/3.0)
                 +s_pSCH_int(h_pSCH/3.0)
                 +s_MQW(h_MQW)
                 +s_nSCH_int(h_nSCH/3.0)
                 +s_nSCH_mid(h_nSCH/3.0)
                 +s_nSCH_ext(h_nSCH/3.0)
                 #+s_nEBL(h_EBL)
                 +s_nInP(h_nInP)
                 +s_SL(h_SL)
                 +s_bondOxide(h_bondOxide)
                 +s_Si_ridge(h_Si_ridge)
                 +s_Si_slab(h_Si_slab)
                 +s_SiO2(h_SiO2)
                 )

strip.set_parent(top_prj)
strip.name = 'strip'
strip.buildNode()
#strip.calc()
# check the fimmwave
    
f.close()