Modulator
From OptoelectronicsWiki
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Process
xls file: Media:EAM10_process.xls slides: Media:EAM10_process.pptx
Mask
Mask files: Media: EAM10_Mask.zip
Presentation
OFC2011: Over 40 GHz Traveling-Wave Electroabsorption Modulator Based on Hybrid Silicon Platform
Related Papers
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation
Time: 2011
Design
Epitaxy 1250: Specs of the 1250nm EPI Epitaxy 1470: Specs of the 1470nm EPI
Electrode Design: Scripts for electrode design Calculation results for different electrode designs
Simulation: Optical mode calculation (for COMSOL), support tilt QW sidewall Optical mode calculation (Fimmwave+Jaredwave), limited to vertical sidewall Taper simulation input script (Fimmwave+Jaredwave), baseline/short pMesa/no pMesa
Process
xls file: Media:EAM11_process.xls slides: Media:EAM11_process_flow.pptx implantation: Media: EAM11_implantation.zip AR coating: Media: EAM11_ARCoating.zip
Mask
CPW Testing Mask (revised on 20110127) EAM11 Mask Final (revised on 20111128) EAM11 Mask Map (revised on 20120828) EAM11 Mask Design Overview (revised on 20120828)
Data
=== TLM === EAM11 B1-A (1310nm) before SU8 spin EAM11 B2-A (1550nm) before SU8 spin EAM11 B1-A (1310nm) after final process EAM11 B1-B (1310nm) after final process EAM11 B2-B (1550nm) after final process
Report
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design
Presentation
OFC2012：1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz OI2012：1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation
