University of California, Santa Barbara
Department of Electrical and Computer Engineering


Semiconductor Device Processing

ECE 124B Winter 2010

Instructor: Dr. Ilan Ben-Yaacov

Schedule: Tues/Thurs 9:30 - 10:45am, GIRV 2123



*2/17/10: HW5 is posted on the class website.

*2/08/10: HW4 is posted on the class website.

*1/20/10: HW3 is posted on the class website.

*1/13/10: HW2 is posted on the class website.

*1/04/10: Welcome to ECE 124B. HW1 and all handouts are posted on the class website.


Syllabus (click here for syllabus in .pdf format)

Time: Tues/Thurs 9:30 10:45am

Place: GIRV 2123

Instructor: Dr. Ilan Ben-Yaacov, ESB Room 2213, ext 5295, ilan[at]engineering.ucsb.edu

Office Hours: Tues/Thurs 10:45 11:45am, ESB Room 2213


Teaching Assistants: Samuel Beach (beach[at]umail.ucsb.edu), office/lab hours TBA


Lab Supervisor: Bob Hill, Engineering II Room 1141, ext 4142, bob[at]ece.ucsb.edu


Laboratory Hours:  There are no scheduled hours for the lab work.  The UCSB Instructional Cleanroom will be available weekdays from 8am-5pm.  For safety reasons, you will not be permitted to work alone.  There will be equipment demonstration sessions, which are required.


Lab Safety:  It is essential that safety procedures be followed at all times.  You will be working with acids (including HF), bases, and organic solvents that can be hazardous if not handled properly.  You are required to attend a safety orientation session before you will be permitted to enter the lab.  There are sessions provided by the university, or a series of tapes provided by the ECE department and Bob Hill.


Required Text: Fundamentals of Semiconductor Fabrication by G. S. May and S. M. Sze, published by John Wiley and Sons, 2004, ISBN 0-471-23279-3.


Handouts and class notes will complement the text.  All handouts can be downloaded by clicking on the appropriate link at the bottom of this website.


Prerequisites: ECE 132 with a grade of C- or better, or equivalent, or consent of the instructor.



Topics to be covered:

*Optical Lithography

*Thermal Oxidation

*Junction Formation


*Thin Film Deposition

*Ohmic, Schottky, and MOS Contact Formation

*NMOS Process and Characterization



Course Format: There will be homework assignments, a midterm, laboratory work, and a final lab project. Laboratory work will consist of experimenting with various processes such as lithography, thermal oxidation, and wet etching, and determining process tolerances.  For the final project, you will use the skills you have developed in the lab to fabricate and characterize a MOS transistor.  Homework, midterm, lab, and final lab project will each contribute 10%, 35%, 15% and 40% to the final grade.



Lab Projects

Lab Project 1 Due Tues, 1/19/10 by 5:00pm 

Lab Project 2 Due Tues, 2/2/10 by 5:00pm

Final Lab Project Due Wednesday, 3/17/10 by 5:00pm


Homework Assignments turn into box on 3rd floor of HFH

Homework 1 Due Thurs, 1/14/10 by 5:00pm


Homework 2 Due Thurs, 1/21/10 by 5:00pm


Homework 3 Due Thurs, 2/04/10 by 5:00pm


Homework 4 Due Thurs, 2/18/10 by 5:00pm


Homework 5 Due Tues, 3/2/10 by 5:00pm



Homework Solutions (requires password)



Midterm will be on Thursday, 3/4/10. You will be allowed a calculator and 2 pages of notes (8.5 by 11 inch, you may write on front and back). Midterm review will be in class on Tuesday 3/2/10.



Lab Procedures Handouts

NMOS Process Solid Solubilities of Impurities in Silicon

Wafer Scribing and Cleaning Periodic Table of Elements

HF Safety Tips Lateral Diffusion

Lithography Process Slides

Descum Process

Furnace Cleanliness

Oxidation Procedure

Phosphorous Predeposition

Metal Lift-Off Process

Metal Evaporation Thermal Evaporator



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