Department of Electrical and Computer Engineering
Semiconductor Device Processing
ECE 124B – Winter 2010
Instructor: Dr. Ilan Ben-Yaacov
Schedule: Tues/Thurs 9:30 - 10:45am, GIRV 2123
2/17/10: HW5 is posted on the class website.
2/08/10: HW4 is posted on the class website.
1/20/10: HW3 is posted on the class website.
1/13/10: HW2 is posted on the class website.
1/04/10: Welcome to ECE 124B. HW1 and all handouts are posted on the class website.
Syllabus (click here for syllabus in .pdf format)
Time: Tues/Thurs 9:30 – 10:45am
Place: GIRV 2123
Instructor: Dr. Ilan Ben-Yaacov, ESB Room 2213, ext 5295, ilan[at]engineering.ucsb.edu
Office Hours: Tues/Thurs 10:45 – 11:45am, ESB Room 2213
Teaching Assistants: Samuel Beach (beach[at]umail.ucsb.edu), office/lab hours TBA
Lab Supervisor: Bob Hill, Engineering II Room 1141, ext 4142, bob[at]ece.ucsb.edu
Laboratory Hours: There are no scheduled hours for the lab work. The UCSB Instructional Cleanroom will be available weekdays from 8am-5pm. For safety reasons, you will not be permitted to work alone. There will be equipment demonstration sessions, which are required.
Lab Safety: It is essential that safety procedures be followed at all times. You will be working with acids (including HF), bases, and organic solvents that can be hazardous if not handled properly. You are required to attend a safety orientation session before you will be permitted to enter the lab. There are sessions provided by the university, or a series of tapes provided by the ECE department and Bob Hill.
Required Text: Fundamentals of Semiconductor Fabrication by G. S. May and S. M. Sze, published by John Wiley and Sons, 2004, ISBN 0-471-23279-3.
Handouts and class notes will complement the text. All handouts can be downloaded by clicking on the appropriate link at the bottom of this website.
Prerequisites: ECE 132 with a grade of C- or better, or equivalent, or consent of the instructor.
Topics to be covered:
Thin Film Deposition
Ohmic, Schottky, and MOS Contact Formation
NMOS Process and Characterization
Course Format: There will be homework assignments, a midterm, laboratory work, and a final lab project. Laboratory work will consist of experimenting with various processes such as lithography, thermal oxidation, and wet etching, and determining process tolerances. For the final project, you will use the skills you have developed in the lab to fabricate and characterize a MOS transistor. Homework, midterm, lab, and final lab project will each contribute 10%, 35%, 15% and 40% to the final grade.
Lab Project 1 – Due Tues, 1/19/10 by 5:00pm
Lab Project 2 – Due Tues, 2/2/10 by 5:00pm
Final Lab Project – Due Wednesday, 3/17/10 by 5:00pm
Homework 1 – Due Thurs, 1/14/10 by 5:00pm
Homework 2 – Due Thurs, 1/21/10 by 5:00pm
Homework 3 – Due Thurs, 2/04/10 by 5:00pm
Homework 4 – Due Thurs, 2/18/10 by 5:00pm
Homework 5 – Due Tues, 3/2/10 by 5:00pm
Midterm will be on Thursday, 3/4/10. You will be allowed a calculator and 2 pages of notes (8.5 by 11 inch, you may write on front and back). Midterm review will be in class on Tuesday 3/2/10.