University of California, Santa Barbara
Department of Electrical and Computer Engineering

Integrated Circuit Design and Fabrication

ECE 124C - Spring 2004

Instructor: Dr. Ilan Ben-Yaacov

Schedule:Tues/Thurs 2 - 3:15, GIRV 2135


(Download printable pdf version of syllabus)

Topics to be covered

• MOS Transistors

• p-n junctions

• Bipolar Transistors

• VLSI technologies

• Advanced processing techniques

Prerequisite: ECE 132 and ECE 124B or equivalent or consent of the instructor

Instructor: Ilan Ben-Yaacov, Room 5120A, Engineering I, ext. 3812+211,

Time: Tuesday and Thursday 2:00-3:15 p.m.

Place: GIRV 2135   

Text: Device Electronics for Integrated Circuits by Richard S. Muller and Theodore I. Kamins. Published by John Wiley and Sons. 3d edition, 2002.

Handouts and class notes will complement the texts.

Course format: There will be homework assignments, a midterm, a presentation and laboratory work. Laboratory work will consist of designing, fabricating and testing of something interesting such as a simple MOS circuit. You will design the entire process sequence, simulate the expected device characteristics and circuit performance, and compare it with your experimental results. Homework, midterm, presentation, and laboratory will each contribute 20%, 20%, 20% and 40% to the final grade. The laboratory will consist of a final report and a presentation to the class.

Office Hours: Office hours are Tuesdays and Thursdays 3:30-4:30 p.m. or by appointment, or just stop by..

Teaching Assistant: The TA is Shouxuan Xie,, office hours TBA.

Lab Supervisor: Martin Vandenbroeck, Room 4110, Engineering I, ext. 4142,



Homework 1

Homework 2                    HW 2 Solutions

Homework 3*                  HW 3 Solutions

Homework 4**                HW 4 Solutions

Homework 5***              HW 5 Solutions

* For problem 2, the bandgap of Al(.2)Ga(.8)As is 1.67 eV.  Also in problem 2, the AlGaAs should be n-type and the GaAs p-type.

** Homework 4 due date has been moved to Tuesday, 5/11/2004.

*** For problem 2, the minority carrier lifetime should be 3 microseconds, not 6 ns.



The midterm will be held on Thursday, 5/27/2004 and will be open book / open notes.



L-Edit tutorial - note: L-Edit has been installed on the following machines in the ECI lab:  ECIPC015, ECIPC014, ECIPC050.  These are the Gateway machines in the second row in the middle isle.

IC Design Project

124B NMOS Process

HEMT Handout 1        HEMT Handout 2

Tasker / Hughes paper on effects of source and drain resistance on RF performance

Click here to download your .tdb and .gds files:      124Cmaskdesign.gds      124Cmaskdesign.tdb

Download sample mask order



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Last Updated: March 29, 2004