We are pursuing a unique selective area growth technique in 3D confined nano-structured templates called TASE (template assisted selective epitaxy) using our in-house metalorganic chemical vapor deposition (MOCVD) system. Fabrication of channel-like nanometer-scale horizontal structures allows for the selective deposition and lateral growth of group III-V semiconductor materials . Under a project led by Prof. Mark Rodwell, we are applying this approach to develop novel low power electronic devices including horizontal heterojunction-based tunnel field effect transistors (TFETs).



Selected Relevant Publications:

  1. “Template assisted selective epitaxy of InP via MOVPE towards horizontal heterojunctions for tunnel field effect transistors,” ICMOVPE XIX, 2018.


Mark Rodwell Group (UCSB), Chris Palmstrøm Group (UCSB)