Commercially, laser integration for silicon photonics has been based primarily on hybrid integration. Future large-scale photonic integrated circuits based on silicon photonics will greatly benefit from monolithic integration of laser sources by direct heteroepitaxy on silicon. Our group has developed novel techniques to grow low-defect-density gallium arsenide (GaAs) and indium phosphide (InP) on exact oriented silicon and silicon on insulator (SOI), the latter of which is the mainstay of silicon photonics. We have also been working closely with SUNY Polytechnic Institute and have successfully transferred some growth processes to their 300-mm wafer metalorganic chemical vapor deposition (MOCVD) facility, and demonstrated electrically pumped continuous wave lasers. Some of this work is a part of the American Institute for Manufacturing Integrated Photonics (AIM Photonics) effort, under which Prof. Klamkin leads a “Laser Integration by Heteroepitaxy” project. We have also demonstrated one of the first InP-based nanolaser structures on SOI emitting at 1550 nm.


Selected Relevant Publications:

1. “1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates,” Applied Physics Letters, 111, 032105, 2017.

2. “Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition,” Journal of Electronic Materials, 2017.

3. “Toward fully monolithic 1550-nm lasers on silicon by direct hetero-epitaxy growth on patterned substrates,” Conference on Lasers and Electro-Optics (CLEO), paper AM4A.6, 2017.

4. “1550-nm InGaAsP multi-quantum-well structures in InP nano-ridges by selective MOCVD growth on SOI substrates,” Integrated Photonics Research, Silicon and Nanophotonics Conference (IPR), paper ITu2A.3, 2017.

Collaborators: ORG, SUNY Polytechnic Institute