Fabrizio GambiniFabrizio Gambini was born in Piacenza (Italy) in 1987. He received the B.S. degree in 2010 from the Politecnico of Milan, Milan (Italy) in telecommunication engineering and, from the same university, he received the M.S. degree in telecommunication engineering in 2012 defending the thesis “Modeling and characterization of first order optical integrated filters in indium phosphide.” He received the Ph.D. degree from the Scuola Superiore Sant’Anna, Pisa (Italy) where his main activities were the study, design, fabrication and characterization of photonic integrated devices based on Silicon on Insulator and Indium Phosphide technology platforms. In 2016 he was a visitor in the Integrated Photonics Laboratory a t UCSB. He also worked with CNIT, Pisa (Italy), as research assistant within the European Project IRIS, developing an high-capacity and recunfigurable wavelength-division multiplexing (WDM) photonic switch based on ring resonators. In 2018 he joined the Integrated Photonics Laboratory as a Postdoctoral Research Associate where his interests are integrated photonic technologies for data center interconnects and free space communications.