Difference between revisions of "E-beam Litho recipe"
From OptoelectronicsWiki
(→ZEP 520A positive resist) |
|||
(2 intermediate revisions by one other user not shown) | |||
Line 1: | Line 1: | ||
− | ZEP 520A positive resist | + | ====ZEP 520A positive resist==== |
− | 1)spin HMDS 5000 rpm 30sec | + | *1)spin HMDS 5000 rpm 30sec |
− | 2)spin ZEP 520A | + | *2)spin ZEP 520A 5000 rpm 30sec (~300nm) |
− | 3)softbake 180C 5min | + | *3)softbake 180C 5min |
− | 4)Exposure dosage: 450 uC/cm2 | + | *4)deposit 100A of Au in thermal evaporator |
− | + | *5)Exposure dosage: 450 uC/cm2 | |
+ | *6)Etch Au in Gold Etchant for 10 sec | ||
+ | *7)Develpment: | ||
MIBK:Iso=1:1 , 60sec | MIBK:Iso=1:1 , 60sec | ||
MIBK:Iso=9:1 , 20sec | MIBK:Iso=9:1 , 20sec | ||
− | + | *8)Si etch in DRIE chamber | |
recipe:MITB_01 | recipe:MITB_01 | ||
C4F8/SF6/Ar=56/24/20sccm | C4F8/SF6/Ar=56/24/20sccm |
Latest revision as of 23:55, 13 May 2011
ZEP 520A positive resist[edit]
- 1)spin HMDS 5000 rpm 30sec
- 2)spin ZEP 520A 5000 rpm 30sec (~300nm)
- 3)softbake 180C 5min
- 4)deposit 100A of Au in thermal evaporator
- 5)Exposure dosage: 450 uC/cm2
- 6)Etch Au in Gold Etchant for 10 sec
- 7)Develpment:
MIBK:Iso=1:1 , 60sec MIBK:Iso=9:1 , 20sec
- 8)Si etch in DRIE chamber
recipe:MITB_01 C4F8/SF6/Ar=56/24/20sccm ICP/CCP power=850W/18W Pressure= 19mT Temperature:10C/40C Etch rate: ZEP: 37nm/min Silicon: 100nm/min