Difference between revisions of "SOI grating definition"
From OptoelectronicsWiki
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| − | == | + | ==Current Processes== |
| + | ===Sweeper Vertical Grating Coupler Process=== | ||
| + | |||
| + | |||
| + | ==Process Development Summary== | ||
| + | ===Dose/Duty Cycle Analysis with Proximity Effect Observations=== | ||
| + | PPT | ||
| + | |||
| + | |||
| + | ==Future Untested Processes== | ||
| + | ===Sweeper Two Etch Depth Grating Process (INCOMPLETE)=== | ||
Standad EBL Spin,Bake, Exposure, Develop | Standad EBL Spin,Bake, Exposure, Develop | ||
Revision as of 18:51, 27 October 2011
Contents
Current Processes
Sweeper Vertical Grating Coupler Process
Process Development Summary
Dose/Duty Cycle Analysis with Proximity Effect Observations
PPT
Future Untested Processes
Sweeper Two Etch Depth Grating Process (INCOMPLETE)
Standad EBL Spin,Bake, Exposure, Develop
Spin AZ4210 (4000rpm, 30sec) Pre-Exposure Bake (95C, 1min)
Lithography 30 GCA Stepper / Autostepper
Exposure: 3sec / 1sec (NEEDS CALIBRATION) Focus Offset: 0 (NEEDS CALIBRATION) NO POST-EXPOSURE BAKE Develop (AZ400K 1:4 diluted, 1min) DI Rinse
Partial deep grating etch
4210 strip in ISO
Shallow grating etch/Complete deep grating etch.
ZEP Strip (1165)
