Difference between revisions of "Via definition"

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==Current Processes==
 
==Current Processes==
−
        1.1 Sweeper Vertical Grating Coupler Process
+
    15. Via
 +
    15.1.                    Via litho (Via mask)
 +
    15.1.1.  Solvent clean
 +
    15.1.1.1.        Ace, ISO, DI
 +
    15.1.2.  PE2 O2 descum
 +
    15.1.2.1.        300 mT, 100 W, 1 min
 +
    15.1.3.  Dehydration bake
 +
    15.1.3.1.        5 min @ 150 C
 +
    15.1.4.  Spin resist
 +
    15.1.4.1.        Blow sample with N2
 +
    15.1.4.2.        Dispense SU8
 +
    15.1.4.3.        10 sec @ 500 (100 rpm ramp), 30 sec @ 3K (300 rpm ramp)
 +
    15.1.4.4.        Bake for 2 min @ 95 C
 +
    15.1.5.  Expose in stepper
 +
    15.1.5.1.        0.5 sec, offset: -12
 +
    15.1.6.  Bake for 1 min @ 95 C
 +
    15.1.7.  Develop in Su 8 developer
 +
    15.1.7.1.        Dip and shake for 60 sec, pipet for 15 sec
 +
    15.1.8.  ISO, DI
 +
    15.1.9.  PE2 O2 descum
 +
    15.1.9.1.        300 mT, 100 W, 1 min
 +
    15.1.10.                      Inspect Via for opening. If not open, do 30 sec descums until open.
 +
    15.2.                    SU8 curing
 +
    15.2.1.  Start @ 95 C
 +
    15.2.2.  5 min @ 150 C
 +
    15.2.3.  5 min @ 205 C
 +
    15.2.4.  30 min @ 260 C
 +
    15.2.5.  5 min @ 205 C
 +
    15.2.6.  5 min @ 150 C
 +
    15.2.7.  Ramp to 95 C and let cool.
 +
    15.2.8.  Descum/CF4/Descum: 30/30/15 sec
 +
    15.2.9.  PE2 O2 descum
 +
    15.2.9.1.        300 mT, 200 W, 5 min
 +
    15.3.                    SiN deposition
 +
    15.3.1.  Deposit 3000A of SiN
 +
    15.4.                    Litho (Via mask)
 +
    15.4.1.  Solvent clean
 +
    15.4.1.1.        Ace, ISO, DI
 +
    15.4.2.  PE2 O2 descum
 +
    15.4.2.1.        300 mT, 100 W, 1 min
 +
    15.4.3.  Dehydration bake
 +
15.4.3.1.        5 min @ 150 C
 +
15.4.4.  Spin resist
 +
15.4.4.1.        Blow sample with N2
 +
15.4.4.2.        Dispense HMDS
 +
15.4.4.3.        Spin for 30 sec @ 3K
 +
15.4.4.4.        Blow sample with N2
 +
15.4.4.5.        Dispense nLOF2020
 +
15.4.4.6.        Spin for 30 sec @ 3K
 +
15.4.4.7.        Bake for 60 sec @ 110 C
 +
15.4.4.8.        Expose in stepper
 +
15.4.4.8.1.              0.11 sec, offset: -12
 +
15.4.5.  Bake for 90 sec @ 110C
 +
15.4.6.  Develop in AZ300MIF for 1 min
 +
15.5.                    SiN etch in PE2 (3000A via adhesion + 3000A implant HM)
 +
15.5.1.  Descum/CF4/Descum: 1/8.5/1 min
 +
 
 
==Process Development Summary==
 
==Process Development Summary==
 
         2.1 Dose/Duty Cycle Analysis with Proximity Effect Observations
 
         2.1 Dose/Duty Cycle Analysis with Proximity Effect Observations
 
==Future Untested Processes==
 
==Future Untested Processes==
 
         3.1 Sweeper Two Etch Depth Grating Process (INCOMPLETE)
 
         3.1 Sweeper Two Etch Depth Grating Process (INCOMPLETE)

Revision as of 19:32, 27 October 2011

Back to Process_Hybrid_Silicon.

Current Processes

    15. Via
    15.1.                    Via litho (Via mask)
    15.1.1.  Solvent clean
    15.1.1.1.        Ace, ISO, DI
    15.1.2.  PE2 O2 descum
    15.1.2.1.        300 mT, 100 W, 1 min
    15.1.3.  Dehydration bake
    15.1.3.1.        5 min @ 150 C
    15.1.4.  Spin resist
    15.1.4.1.        Blow sample with N2
    15.1.4.2.        Dispense SU8
    15.1.4.3.        10 sec @ 500 (100 rpm ramp), 30 sec @ 3K (300 rpm ramp)
    15.1.4.4.        Bake for 2 min @ 95 C
    15.1.5.  Expose in stepper
    15.1.5.1.        0.5 sec, offset: -12
    15.1.6.  Bake for 1 min @ 95 C
    15.1.7.  Develop in Su 8 developer
    15.1.7.1.        Dip and shake for 60 sec, pipet for 15 sec
    15.1.8.  ISO, DI
    15.1.9.  PE2 O2 descum
    15.1.9.1.        300 mT, 100 W, 1 min
    15.1.10.                      Inspect Via for opening. If not open, do 30 sec descums until open.
    15.2.                    SU8 curing
    15.2.1.  Start @ 95 C
    15.2.2.  5 min @ 150 C
    15.2.3.  5 min @ 205 C
    15.2.4.  30 min @ 260 C
    15.2.5.  5 min @ 205 C
    15.2.6.  5 min @ 150 C
    15.2.7.  Ramp to 95 C and let cool.
    15.2.8.  Descum/CF4/Descum: 30/30/15 sec
    15.2.9.  PE2 O2 descum
    15.2.9.1.        300 mT, 200 W, 5 min
    15.3.                    SiN deposition
    15.3.1.  Deposit 3000A of SiN
    15.4.                    Litho (Via mask)
    15.4.1.  Solvent clean
    15.4.1.1.        Ace, ISO, DI
    15.4.2.  PE2 O2 descum
    15.4.2.1.        300 mT, 100 W, 1 min
    15.4.3.  Dehydration bake

15.4.3.1.        5 min @ 150 C 15.4.4.  Spin resist 15.4.4.1.        Blow sample with N2 15.4.4.2.        Dispense HMDS 15.4.4.3.        Spin for 30 sec @ 3K 15.4.4.4.        Blow sample with N2 15.4.4.5.        Dispense nLOF2020 15.4.4.6.        Spin for 30 sec @ 3K 15.4.4.7.        Bake for 60 sec @ 110 C 15.4.4.8.        Expose in stepper 15.4.4.8.1.              0.11 sec, offset: -12 15.4.5.  Bake for 90 sec @ 110C 15.4.6.  Develop in AZ300MIF for 1 min 15.5.                    SiN etch in PE2 (3000A via adhesion + 3000A implant HM) 15.5.1.  Descum/CF4/Descum: 1/8.5/1 min

Process Development Summary

       2.1 Dose/Duty Cycle Analysis with Proximity Effect Observations

Future Untested Processes

       3.1 Sweeper Two Etch Depth Grating Process (INCOMPLETE)
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