Difference between revisions of "Epitaxy layer design"

From OptoelectronicsWiki
Jump to: navigation, search
(Electron Blocking Layer)
(Electron Blocking Layer)
Line 4: Line 4:
 
==Suggestions for revisions==
 
==Suggestions for revisions==
 
===Electron Blocking Layer===
 
===Electron Blocking Layer===
{| border="3"
+
Better electron confinement
|- style="background:slategrey; color:white"
+
==== Advantage ====
! Pros !! Cons !! Explanation
+
- Better high temperature performance <br> - Lower threshold <br> - Improved quantum efficiency
|-
+
==== Disadvantage ====
|| - Better high temperature performance <br> - Lower threshold <br> - Improved quantum efficiency || - one more layer || Better electron confinement
+
- one more layer
|-
+
|}
+

Revision as of 11:07, 16 December 2011

Back to Process_Hybrid_Silicon.

Current EPI Structure

Suggestions for revisions

Electron Blocking Layer

Better electron confinement

Advantage

- Better high temperature performance
- Lower threshold
- Improved quantum efficiency

Disadvantage

- one more layer