Difference between revisions of "UCSB E-Phi Runs"

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(Components and structures)
Line 7: Line 7:
 
====Components and structures====
 
====Components and structures====
 
* Bonding test structures
 
* Bonding test structures
** Patterns for bonding
+
** Patterns for bonding [Di, Martijn]
 
* SOI waveguide test structures
 
* SOI waveguide test structures
** Resolution markers
+
** Resolution markers, Taper tip test structure [Sudha]
** Loss test structures
+
** Loss test structures [Martijn]
 
* SOI component test structures
 
* SOI component test structures
** MMIs
+
** MMIs [Martijn, Yongbo]
** Bends
+
** Bends [Martijn]
** 10-GHz and 20-GHz ring filters/oscillators
+
** Offsets [Martijn]
 +
** 10-GHz and 20-GHz ring filters/oscillators [Martijn]
 
* Other ideas
 
* Other ideas
 
+
** WG crossing [Sid]
 
+
** Silicon nanowire tapers [Jock]
 
+
** Taper from 0.8um to 2.0um, change taper length/shape [Sid, Geza]
 
+
  
 
===UCSB-E-Phi-test-2===
 
===UCSB-E-Phi-test-2===

Revision as of 12:53, 16 December 2011

Planned runs for UCSB - E-Phi

Component test runs

UCSB-E-Phi-test-1

SOI only: test litho and bonding uniformity
Planning: ideas due 12/14, mask review around 12/20

Components and structures

  • Bonding test structures
    • Patterns for bonding [Di, Martijn]
  • SOI waveguide test structures
    • Resolution markers, Taper tip test structure [Sudha]
    • Loss test structures [Martijn]
  • SOI component test structures
    • MMIs [Martijn, Yongbo]
    • Bends [Martijn]
    • Offsets [Martijn]
    • 10-GHz and 20-GHz ring filters/oscillators [Martijn]
  • Other ideas
    • WG crossing [Sid]
    • Silicon nanowire tapers [Jock]
    • Taper from 0.8um to 2.0um, change taper length/shape [Sid, Geza]

UCSB-E-Phi-test-2

III/V lasers and SOAs on SOI;

UCSB-E-Phi-test-3

SOI passives coupled to ULLWs;

UCSB-E-Phi-test-4

EDWA test run;

UCSB-E-Phi-test-5

Isolator test run;

Shuttle runs

UCSB-E-Phi-1

III/V gain on SOI;

UCSB-E-Phi-2

III/V gain and ULLWs on SOI;

UCSB-E-Phi-3

to be decided: either isolators or EDWAs on a III/V on SOI platform.