Difference between revisions of "File:SWEEPER Actives Trav v21 2 ACTIVE SI ONLY.docx"
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(- Blanks filled in for SU8, nitride etches - heavy ion implant moved to end to avoid exceeding thermal budget - SU8/nitride to be opened for gratings, heavy ion, during VIA2 (probe via) litho, then oxide/nitride protection layers opened during GO (grating) |
(uploaded a new version of "File:SWEEPER Actives Trav v21 2 ACTIVE SI ONLY.docx": - Blanks filled in for SU8, nitride etches - heavy ion implant moved to end to avoid exceeding thermal budget - SU8/nitride to be opened for gratings, heavy ion) |
(No difference)
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Latest revision as of 12:13, 24 July 2012
- Blanks filled in for SU8, nitride etches - heavy ion implant moved to end to avoid exceeding thermal budget - SU8/nitride to be opened for gratings, heavy ion, during VIA2 (probe via) litho, then oxide/nitride protection layers opened during GO (grating open) litho, and then heavy ion implant proceeds using the already opened window (heavy ion implant mask need only protect the opened grating windows)
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| Date/Time | Dimensions | User | Comment | |
|---|---|---|---|---|
| current | 12:13, 24 July 2012 | (72 KB) | JKD (Talk | contribs) | - Blanks filled in for SU8, nitride etches - heavy ion implant moved to end to avoid exceeding thermal budget - SU8/nitride to be opened for gratings, heavy ion, during VIA2 (probe via) litho, then oxide/nitride protection layers opened during GO (grating |
| 09:54, 24 July 2012 | (73 KB) | JKD (Talk | contribs) | - Blanks filled in for SU8, nitride etches - heavy ion implant moved to end to avoid exceeding thermal budget - SU8/nitride to be opened for gratings, heavy ion, during VIA2 (probe via) litho, then oxide/nitride protection layers opened during GO (grating |
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