Difference between revisions of "E-Beam Lithography (EBL)"

From OptoelectronicsWiki
Jump to: navigation, search
(Proximity Correction)
 
(3 intermediate revisions by 3 users not shown)
Line 1: Line 1:
 +
== New resist (CSAR)
 +
 +
 +
 
== Proximity Correction ==
 
== Proximity Correction ==
  
Line 10: Line 14:
 
** SEMs - 2nd Chips - 2:1 ZEP dosage array: [[file:2ndChips_2_to_1 ZEP SEMs.zip]]<BR>
 
** SEMs - 2nd Chips - 2:1 ZEP dosage array: [[file:2ndChips_2_to_1 ZEP SEMs.zip]]<BR>
  
 +
** Excel Data : [[file:ProximityData.xlsx]]<BR>
 +
 +
 +
* BeamerCal5 - Photonic crystal and grating arrays: [[file:5_beamercal5.zip]]<BR>
  
  
 
login to BEAMER server:
 
login to BEAMER server:
  
128.111.192.142
+
128.111.192.87
  
 
u:bowers
 
u:bowers
  
p:femto
+
p:bowers
  
  

Latest revision as of 15:41, 12 May 2014

== New resist (CSAR)


Proximity Correction[edit]



login to BEAMER server:

128.111.192.87

u:bowers

p:bowers


Run a monte carlo simulation of the "substrate" and resist you are using in MC^3.

For example: ZEP(2k) on 500nm SOI with 1um BOx.

1) Use the drop down tab to select PENELOPE.

2) Build your layer stack in the PELELOPE GUI. z-Resolution must be an integer multiple of the thickness.

3) Check Save the result for the resist layer, for this example we have saved the "ZEP520_" layer


Return to  Cleanroom_Equipment