Difference between revisions of "E-Beam Lithography (EBL)"
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Latest revision as of 15:41, 12 May 2014
== New resist (CSAR)
Proximity Correction[edit]
- SEMs
- SEMs - 1st Chips - Pure ZEP dosage array: File:Pure ZEP SEMs.zip
- SEMs - 1st Chips - 2:1 ZEP dosage array: File:2 to 1 ZEP SEMs.zip
- SEMs - 2nd Chips - Pure ZEP dosage array: File:2ndChips Pure Zep-EBL Correction 3 22 13.zip
- SEMs - 2nd Chips - 2:1 ZEP dosage array: File:2ndChips 2 to 1 ZEP SEMs.zip
- SEMs - 1st Chips - Pure ZEP dosage array: File:Pure ZEP SEMs.zip
- Excel Data : File:ProximityData.xlsx
- Excel Data : File:ProximityData.xlsx
- BeamerCal5 - Photonic crystal and grating arrays: File:5 beamercal5.zip
login to BEAMER server:
128.111.192.87
u:bowers
p:bowers
Run a monte carlo simulation of the "substrate" and resist you are using in MC^3.
For example: ZEP(2k) on 500nm SOI with 1um BOx.
1) Use the drop down tab to select PENELOPE.
2) Build your layer stack in the PELELOPE GUI. z-Resolution must be an integer multiple of the thickness.
3) Check Save the result for the resist layer, for this example we have saved the "ZEP520_" layer
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