Difference between revisions of "Wafer Table (old)"

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m (Aspott moved page Wafer Table to Wafer Table (old): Old wafer table last modified on 28 September 2012, at 22:23. Retain for reference for now.)
 
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|+ '''SOI wafer table'''
 
|+ '''SOI wafer table'''
 
|- style="background:green; color:white"
 
|- style="background:green; color:white"
−
! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note !! User/# needed
+
! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note !! User/# needed!!Location
 
|-
 
|-
−
| 1M22349.1 || 799 || 1 || 1.5 || B || P || 10 || 9.5 || SOITEC|| 8" diameter ||
+
| 1M22349.1 || 799 || 1 || 1.5 || B || P || 10 || 8 || SOITEC|| 8" diameter ||   || Molly's Desk ||
 
|-  
 
|-  
−
| 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B || 0.5um 1E10|| 21 || 10 || SOITEC+LSRL ||   ||
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| 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B || 0.5um 1E10|| 21 || 4 || SOITEC+LSRL || 4" ||   || ESB 2221A ||  
 
|-
 
|-
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| 1I29437.1 || 675 || 1 || 0.4 || 0.2um 1E14 B || 0.2um 1E10|| 4 || 0 || SOITEC+LSRL ||   ||
+
| 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2 || SOITEC+LSRL ||   ||   ||   ||
−
|-
+
−
| 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2+1/3+1/3 || SOITEC ||   ||
+
−
|-
+
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| 1H74447.1 || 675 || 1 || 0.6 || 0.3um 1E14 p type|| 0.3um 1E10|| 5 || 3 || SOITEC ||   ||
+
−
|-
+
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| 1H74447.1 || 675 || 1 || 0.55 || 0.3um 1E14 p type|| 0.25um 1E10|| 10 || 3 || SOITEC ||   ||
+
−
|-
+
−
| 1G47090.1 || 675 || 1 || 1 || 0.3um 1E14 p type|| 0.7um 1E10|| 10 || 2 || SOITEC ||   ||
+
−
|-
+
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|   || 675 || 3 || 1 || 0.25um 1E14 p type|| 0.75um 1E10|| 10 || 7+1/2+1/2 || SOITEC ||   ||
+
 
|-
 
|-
 +
| 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || 12 || SOITEC || Ask Sudha, 8" || &nbsp; || Femto Lab ||
 
|}
 
|}
 
{| border="3"
 
{| border="3"
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! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Details of device layer !! Rib Etch (um) !!# bought !! # remaining !! Supplier !! Note  
 
! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Details of device layer !! Rib Etch (um) !!# bought !! # remaining !! Supplier !! Note  
 
|-
 
|-
−
| H4JYY8G || &nbsp; || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1/4 || umonyx/Intel || LASOR/PhASER
+
| H4JYY8G || &nbsp; || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1/4 || Numonyx/Intel || LASOR/PhASER
 
|-
 
|-
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| H4JYY8G || &nbsp; || 1 || 0.7 || Undoped Si || 0.4 || 1 || 1 || umonyx/Intel || LASOR/PhASER
+
| H4JYY8G || &nbsp; || 1 || 0.7 || Undoped Si || 0.4 || 1 || 1 || Numonyx/Intel || LASOR/PhASER
 
|-
 
|-
−
| H4JYY8G || &nbsp; || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1 || umonyx/Intel || LASOR/PhASER, oxidation smooth
+
| H4JYY8G || &nbsp; || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1 || Numonyx/Intel || LASOR/PhASER, oxidation smooth
−
|-
+
−
| &nbsp; || &nbsp; || &nbsp; || &nbsp; || &nbsp; || &nbsp; || &nbsp;|| &nbsp;|| &nbsp;|| &nbsp;
+
 
|-
 
|-
 
|}
 
|}
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! Wafer ID !! PL(nm) !! Data and spec-sheet !! Size (in) !! # bought !! # remaining !! Supplier !! Note  
 
! Wafer ID !! PL(nm) !! Data and spec-sheet !! Size (in) !! # bought !! # remaining !! Supplier !! Note  
 
|-  
 
|-  
−
| GLDA0908271-C || 1545 || &nbsp; || 2 || 5 || 1? || LandMark || LASOR/PhASER 200nm SCH with center QW
+
| L3LDA1203272 || 1547.6 || [[media:report_0711281-E.pdf|Epi1]] || 2 || 3 || 2.25 || LandMark || EPHI-Epi1 125nm SCH with 8 centered QW's, graded contact layer.
 
|-
 
|-
−
| PULSAR1|| ~1030 || &nbsp; || 3 || 2.75 || 1.5 3" || LandMark || PULSAR
+
|-
 +
| L3LDA1203272 || 1545.8 || [[media:report_0711281-F.pdf|Epi2]] || 2 || 3 || 2.25 || LandMark || EPHI-Epi2 graded 100nm SCH with 7 centered QW's.
 
|-
 
|-
−
| PULSAR2 || ~1030  || &nbsp; || 3 || 2 || 1.5 3" || LandMark || PULSAR
+
|-
 +
| GLDA1209083 || 1548.7 || [[media:report_0711281-E1.pdf|Epi3]] || 2 || 3 || 3 || LandMark || EPHI-Epi3 125nm SCH with 6 centered QW's, graded contact layer and 250nm N-layer.
 +
|-
 +
|-
 +
| GLDA0908271-C || 1545 || &nbsp; || 2 || 5 || 1? || LandMark || LASOR/PhASER 200nm SCH with center QW, see [[Quotes & Spec Sheets]]
 
|-
 
|-
−
| &nbsp; || &nbsp;  || &nbsp; || &nbsp;  || &nbsp;  || &nbsp;  || &nbsp; || &nbsp;
+
| PULSAR1|| ~1030 || &nbsp; || 3 || 2.75 || 1.5 || LandMark || PULSAR
 
|-
 
|-
−
| &nbsp; || &nbsp;  || &nbsp; || &nbsp;  || &nbsp;  || &nbsp;  || &nbsp; || &nbsp;
+
| PULSAR2 || ~1030  || &nbsp; || 3 || 2 || 1.5 || LandMark || PULSAR
 
|-
 
|-
  

Latest revision as of 16:56, 24 November 2014

SOI wafer table
Wafer ID Substrate(um) BOX(um) Device layer (um) Doped Si Undoped Si # bought # remaining Supplier Note User/# needed Location
1M22349.1 799 1 1.5 B P 10 8 SOITEC 8" diameter   Molly's Desk
1I29437.1 675 1 0.7 0.2um 1E14 B 0.5um 1E10 21 4 SOITEC+LSRL 4"   ESB 2221A
1H74447.1 675 1 0.7 0.3um 1E14 p type 0.4um 1E10 10 2 SOITEC+LSRL      
1N43222.1 675 1 0.7 <1E14 p type na 25 12 SOITEC Ask Sudha, 8"   Femto Lab
SOI patterned wafer table
Wafer ID Substrate(um) BOX(um) Device layer (um) Details of device layer Rib Etch (um) # bought # remaining Supplier Note
H4JYY8G   1 0.7 Undoped Si 0.3 1 1/4 Numonyx/Intel LASOR/PhASER
H4JYY8G   1 0.7 Undoped Si 0.4 1 1 Numonyx/Intel LASOR/PhASER
H4JYY8G   1 0.7 Undoped Si 0.3 1 1 Numonyx/Intel LASOR/PhASER, oxidation smooth
III/V wafer table
Wafer ID PL(nm) Data and spec-sheet Size (in) # bought # remaining Supplier Note
L3LDA1203272 1547.6 Epi1 2 3 2.25 LandMark EPHI-Epi1 125nm SCH with 8 centered QW's, graded contact layer.
L3LDA1203272 1545.8 Epi2 2 3 2.25 LandMark EPHI-Epi2 graded 100nm SCH with 7 centered QW's.
GLDA1209083 1548.7 Epi3 2 3 3 LandMark EPHI-Epi3 125nm SCH with 6 centered QW's, graded contact layer and 250nm N-layer.
GLDA0908271-C 1545   2 5 1? LandMark LASOR/PhASER 200nm SCH with center QW, see Quotes & Spec Sheets
PULSAR1 ~1030   3 2.75 1.5 LandMark PULSAR
PULSAR2 ~1030   3 2 1.5 LandMark PULSAR
Silicon wafer table
Wafer ID Diameter (inches) Thickness (um) Orientation Dopant Species Resistivity (ohm-cm) # bought # remaining Supplier Note
n/a 4 500 100 As 0.001 - 0.005 25 25 University Wafer CEEM - Si Nanowires
n/a 3 380 111 Sb 0.019 - 0.025 20 20 University Wafer CEEM - Si Nanowires
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