Difference between revisions of "Wafer Table (old)"
From OptoelectronicsWiki
m (Aspott moved page Wafer Table to Wafer Table (old): Old wafer table last modified on 28 September 2012, at 22:23. Retain for reference for now.) |
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|+ '''SOI wafer table''' | |+ '''SOI wafer table''' | ||
|- style="background:green; color:white" | |- style="background:green; color:white" | ||
− | ! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note !! User/# needed | + | ! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note !! User/# needed!!Location |
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− | | 1M22349.1 || 799 || 1 || 1.5 || B || P || 10 || | + | | 1M22349.1 || 799 || 1 || 1.5 || B || P || 10 || 8 || SOITEC|| 8" diameter || || Molly's Desk || |
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− | | 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B || 0.5um 1E10|| 21 || | + | | 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B || 0.5um 1E10|| 21 || 4 || SOITEC+LSRL || 4" || || ESB 2221A || |
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− | + | | 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2 || SOITEC+LSRL || || || || | |
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− | | 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2 | + | |
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+ | | 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || 12 || SOITEC || Ask Sudha, 8" || || Femto Lab || | ||
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| H4JYY8G || || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1 || Numonyx/Intel || LASOR/PhASER, oxidation smooth | | H4JYY8G || || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1 || Numonyx/Intel || LASOR/PhASER, oxidation smooth | ||
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! Wafer ID !! PL(nm) !! Data and spec-sheet !! Size (in) !! # bought !! # remaining !! Supplier !! Note | ! Wafer ID !! PL(nm) !! Data and spec-sheet !! Size (in) !! # bought !! # remaining !! Supplier !! Note | ||
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− | | GLDA0908271-C || 1545 || || 2 || 5 || 1? || LandMark || LASOR/PhASER 200nm SCH with center QW | + | | L3LDA1203272 || 1547.6 || [[media:report_0711281-E.pdf|Epi1]] || 2 || 3 || 2.25 || LandMark || EPHI-Epi1 125nm SCH with 8 centered QW's, graded contact layer. |
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+ | | L3LDA1203272 || 1545.8 || [[media:report_0711281-F.pdf|Epi2]] || 2 || 3 || 2.25 || LandMark || EPHI-Epi2 graded 100nm SCH with 7 centered QW's. | ||
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+ | | GLDA1209083 || 1548.7 || [[media:report_0711281-E1.pdf|Epi3]] || 2 || 3 || 3 || LandMark || EPHI-Epi3 125nm SCH with 6 centered QW's, graded contact layer and 250nm N-layer. | ||
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+ | | GLDA0908271-C || 1545 || || 2 || 5 || 1? || LandMark || LASOR/PhASER 200nm SCH with center QW, see [[Quotes & Spec Sheets]] | ||
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| PULSAR1|| ~1030 || || 3 || 2.75 || 1.5 || LandMark || PULSAR | | PULSAR1|| ~1030 || || 3 || 2.75 || 1.5 || LandMark || PULSAR | ||
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| PULSAR2 || ~1030 || || 3 || 2 || 1.5 || LandMark || PULSAR | | PULSAR2 || ~1030 || || 3 || 2 || 1.5 || LandMark || PULSAR | ||
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Latest revision as of 16:56, 24 November 2014
Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Doped Si | Undoped Si | # bought | # remaining | Supplier | Note | User/# needed | Location | |
---|---|---|---|---|---|---|---|---|---|---|---|---|
1M22349.1 | 799 | 1 | 1.5 | B | P | 10 | 8 | SOITEC | 8" diameter | Molly's Desk | ||
1I29437.1 | 675 | 1 | 0.7 | 0.2um 1E14 B | 0.5um 1E10 | 21 | 4 | SOITEC+LSRL | 4" | ESB 2221A | ||
1H74447.1 | 675 | 1 | 0.7 | 0.3um 1E14 p type | 0.4um 1E10 | 10 | 2 | SOITEC+LSRL | ||||
1N43222.1 | 675 | 1 | 0.7 | <1E14 p type | na | 25 | 12 | SOITEC | Ask Sudha, 8" | Femto Lab |
Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Details of device layer | Rib Etch (um) | # bought | # remaining | Supplier | Note |
---|---|---|---|---|---|---|---|---|---|
H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1/4 | Numonyx/Intel | LASOR/PhASER | |
H4JYY8G | 1 | 0.7 | Undoped Si | 0.4 | 1 | 1 | Numonyx/Intel | LASOR/PhASER | |
H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1 | Numonyx/Intel | LASOR/PhASER, oxidation smooth |
Wafer ID | PL(nm) | Data and spec-sheet | Size (in) | # bought | # remaining | Supplier | Note |
---|---|---|---|---|---|---|---|
L3LDA1203272 | 1547.6 | Epi1 | 2 | 3 | 2.25 | LandMark | EPHI-Epi1 125nm SCH with 8 centered QW's, graded contact layer. |
L3LDA1203272 | 1545.8 | Epi2 | 2 | 3 | 2.25 | LandMark | EPHI-Epi2 graded 100nm SCH with 7 centered QW's. |
GLDA1209083 | 1548.7 | Epi3 | 2 | 3 | 3 | LandMark | EPHI-Epi3 125nm SCH with 6 centered QW's, graded contact layer and 250nm N-layer. |
GLDA0908271-C | 1545 | 2 | 5 | 1? | LandMark | LASOR/PhASER 200nm SCH with center QW, see Quotes & Spec Sheets | |
PULSAR1 | ~1030 | 3 | 2.75 | 1.5 | LandMark | PULSAR | |
PULSAR2 | ~1030 | 3 | 2 | 1.5 | LandMark | PULSAR |
Wafer ID | Diameter (inches) | Thickness (um) | Orientation | Dopant Species | Resistivity (ohm-cm) | # bought | # remaining | Supplier | Note |
---|---|---|---|---|---|---|---|---|---|
n/a | 4 | 500 | 100 | As | 0.001 - 0.005 | 25 | 25 | University Wafer | CEEM - Si Nanowires |
n/a | 3 | 380 | 111 | Sb | 0.019 - 0.025 | 20 | 20 | University Wafer | CEEM - Si Nanowires |