Difference between revisions of "Wafer Table (old)"

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|+ '''SOI wafer table'''
 
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! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note  
 
! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note  
 
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|+ '''III/V wafer table'''
 
|+ '''III/V wafer table'''
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! Wafer ID !! Layerstack !! Data and spec-sheet !! # bought !! # remaining !! Supplier !! Design/simulation results  
 
! Wafer ID !! Layerstack !! Data and spec-sheet !! # bought !! # remaining !! Supplier !! Design/simulation results  
 
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Revision as of 12:11, 2 April 2010

SOI wafer table
Wafer ID Substrate(um) BOX(um) Device layer (um) Doped Si Undoped Si # bought # remaining Supplier Note
1I29437.1 675 1 0.7 0.2um 1E14 B 0.5um 1E10 21 18 SOITEC+LSRL  
1I29437.1 675 1 0.4 0.2um 1E14 B 0.2um 1E10 4 0 SOITEC+LSRL  
1H74447.1 675 1 0.7 0.3um 1E14 p type 0.4um 1E10 10 2+1/3+1/3 SOITEC  
1H74447.1 675 1 0.6 0.3um 1E14 p type 0.6um 1E10 5 3 SOITEC  
1H74447.1 675 1 0.55 0.3um 1E14 p type 0.25um 1E10 10 3 SOITEC  
1G47090.1 675 1 1 0.3um 1E14 p type 0.7um 1E10 10 2 SOITEC  
  675 3 1 0.25um 1E14 p type 0.75um 1E10 10 7+1/2+1/2 SOITEC  
SOI patterned wafer table
Wafer ID Substrate(um) BOX(um) Device layer (um) Details of device layer Rib Etch (um) # bought # remaining Supplier Note
H4JYY8G   1 0.7 Undoped Si 0.3 1 1/4 umonyx/Intel LASOR/PhASER
H4JYY8G   1 0.7 Undoped Si 0.4 1 1 umonyx/Intel LASOR/PhASER
H4JYY8G   1 0.7 Undoped Si 0.3 1 1 umonyx/Intel LASOR/PhASER, oxidation smooth
                   

III/V wafer table
Wafer ID Layerstack Data and spec-sheet # bought # remaining Supplier Design/simulation results
GLDA0908271-C     5 3 LandMark