Difference between revisions of "E-beam Litho recipe"
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(Created page with "erererwe") |
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| − | + | ZEP 520A positive resist | |
| + | |||
| + | 1)spin HMDS 5000 rpm 30sec | ||
| + | 2)spin ZEP 520A 5000rmp 30sec (~300nm) | ||
| + | 3)softbake 180C 5min | ||
| + | 4)Exposure dosage: 450 uC/cm2 | ||
| + | 5)Develpment: | ||
| + | MIBK:Iso=1:1 , 60sec | ||
| + | MIBK:Iso=9:1 , 20sec | ||
| + | 6)Si etch in DRIE chamber | ||
| + | recipe:MITB_01 | ||
| + | C4F8/SF6/Ar=56/24/20sccm | ||
| + | ICP/CCP power=850W/18W | ||
| + | Pressure= 19mT | ||
| + | Temperature:10C/40C | ||
| + | Etch rate: ZEP: 37nm/min | ||
| + | Silicon: 100nm/min | ||
Revision as of 15:13, 24 November 2010
ZEP 520A positive resist
1)spin HMDS 5000 rpm 30sec 2)spin ZEP 520A 5000rmp 30sec (~300nm) 3)softbake 180C 5min 4)Exposure dosage: 450 uC/cm2 5)Develpment:
MIBK:Iso=1:1 , 60sec MIBK:Iso=9:1 , 20sec
6)Si etch in DRIE chamber
recipe:MITB_01
C4F8/SF6/Ar=56/24/20sccm
ICP/CCP power=850W/18W
Pressure= 19mT
Temperature:10C/40C
Etch rate: ZEP: 37nm/min
Silicon: 100nm/min
