Difference between revisions of "E-beam Litho recipe"
From OptoelectronicsWiki
Line 1: | Line 1: | ||
====ZEP 520A positive resist==== | ====ZEP 520A positive resist==== | ||
− | |||
− | |||
*1)spin HMDS 5000 rpm 30sec | *1)spin HMDS 5000 rpm 30sec | ||
*2)spin ZEP 520A 5000rmp 30sec (~300nm) | *2)spin ZEP 520A 5000rmp 30sec (~300nm) | ||
*3)softbake 180C 5min | *3)softbake 180C 5min | ||
− | *4)Exposure dosage: 450 uC/cm2 | + | *4)deposit 100A of Au in thermal evaporator |
− | * | + | *5)Exposure dosage: 450 uC/cm2 |
+ | *6)Etch Au in Gold Etchant for 10 sec | ||
+ | *7)Develpment: | ||
MIBK:Iso=1:1 , 60sec | MIBK:Iso=1:1 , 60sec | ||
MIBK:Iso=9:1 , 20sec | MIBK:Iso=9:1 , 20sec | ||
− | * | + | *8)Si etch in DRIE chamber |
recipe:MITB_01 | recipe:MITB_01 | ||
C4F8/SF6/Ar=56/24/20sccm | C4F8/SF6/Ar=56/24/20sccm |
Revision as of 15:16, 24 November 2010
ZEP 520A positive resist
- 1)spin HMDS 5000 rpm 30sec
- 2)spin ZEP 520A 5000rmp 30sec (~300nm)
- 3)softbake 180C 5min
- 4)deposit 100A of Au in thermal evaporator
- 5)Exposure dosage: 450 uC/cm2
- 6)Etch Au in Gold Etchant for 10 sec
- 7)Develpment:
MIBK:Iso=1:1 , 60sec MIBK:Iso=9:1 , 20sec
- 8)Si etch in DRIE chamber
recipe:MITB_01 C4F8/SF6/Ar=56/24/20sccm ICP/CCP power=850W/18W Pressure= 19mT Temperature:10C/40C Etch rate: ZEP: 37nm/min Silicon: 100nm/min