Difference between revisions of "Wafer Table (old)"

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|+ '''SOI wafer table'''
 
|+ '''SOI wafer table'''
 
|- style="background:green; color:white"
 
|- style="background:green; color:white"
! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note  
+
! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note !! User/# needed
 
|-
 
|-
| 1M22349.1 || 799 || 1 || 1.5 || B || P || 10 || 9.5 || SOITEC|| 8" diameter
+
| 1M22349.1 || 799 || 1 || 1.5 || B || P || 10 || 9.5 || SOITEC|| 8" diameter ||
 
|-  
 
|-  
| 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B || 0.5um 1E10|| 21 || 18 || SOITEC+LSRL ||  
+
| 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B || 0.5um 1E10|| 21 || 18 || SOITEC+LSRL || &nbsp ||
 
|-
 
|-
| 1I29437.1 || 675 || 1 || 0.4 || 0.2um 1E14 B || 0.2um 1E10|| 4 || 0 || SOITEC+LSRL ||  
+
| 1I29437.1 || 675 || 1 || 0.4 || 0.2um 1E14 B || 0.2um 1E10|| 4 || 0 || SOITEC+LSRL || &nbsp ||
 
|-
 
|-
| 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2+1/3+1/3 || SOITEC ||  
+
| 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2+1/3+1/3 || SOITEC || &nbsp ||
 
|-
 
|-
| 1H74447.1 || 675 || 1 || 0.6 || 0.3um 1E14 p type|| 0.3um 1E10|| 5 || 3 || SOITEC ||  
+
| 1H74447.1 || 675 || 1 || 0.6 || 0.3um 1E14 p type|| 0.3um 1E10|| 5 || 3 || SOITEC || &nbsp ||
 
|-
 
|-
| 1H74447.1 || 675 || 1 || 0.55 || 0.3um 1E14 p type|| 0.25um 1E10|| 10 || 3 || SOITEC ||  
+
| 1H74447.1 || 675 || 1 || 0.55 || 0.3um 1E14 p type|| 0.25um 1E10|| 10 || 3 || SOITEC || &nbsp ||
 
|-
 
|-
| 1G47090.1 || 675 || 1 || 1 || 0.3um 1E14 p type|| 0.7um 1E10|| 10 || 2 || SOITEC ||  
+
| 1G47090.1 || 675 || 1 || 1 || 0.3um 1E14 p type|| 0.7um 1E10|| 10 || 2 || SOITEC || &nbsp ||
 
|-
 
|-
|   || 675 || 3 || 1 || 0.25um 1E14 p type|| 0.75um 1E10|| 10 || 7+1/2+1/2 || SOITEC ||  
+
|   || 675 || 3 || 1 || 0.25um 1E14 p type|| 0.75um 1E10|| 10 || 7+1/2+1/2 || SOITEC || &nbsp ||
 
|-
 
|-
 
|}
 
|}

Revision as of 13:46, 23 March 2011

SOI wafer table
Wafer ID Substrate(um) BOX(um) Device layer (um) Doped Si Undoped Si # bought # remaining Supplier Note User/# needed
1M22349.1 799 1 1.5 B P 10 9.5 SOITEC 8" diameter
1I29437.1 675 1 0.7 0.2um 1E14 B 0.5um 1E10 21 18 SOITEC+LSRL &nbsp
1I29437.1 675 1 0.4 0.2um 1E14 B 0.2um 1E10 4 0 SOITEC+LSRL &nbsp
1H74447.1 675 1 0.7 0.3um 1E14 p type 0.4um 1E10 10 2+1/3+1/3 SOITEC &nbsp
1H74447.1 675 1 0.6 0.3um 1E14 p type 0.3um 1E10 5 3 SOITEC &nbsp
1H74447.1 675 1 0.55 0.3um 1E14 p type 0.25um 1E10 10 3 SOITEC &nbsp
1G47090.1 675 1 1 0.3um 1E14 p type 0.7um 1E10 10 2 SOITEC &nbsp
  675 3 1 0.25um 1E14 p type 0.75um 1E10 10 7+1/2+1/2 SOITEC &nbsp
SOI patterned wafer table
Wafer ID Substrate(um) BOX(um) Device layer (um) Details of device layer Rib Etch (um) # bought # remaining Supplier Note
H4JYY8G   1 0.7 Undoped Si 0.3 1 1/4 umonyx/Intel LASOR/PhASER
H4JYY8G   1 0.7 Undoped Si 0.4 1 1 umonyx/Intel LASOR/PhASER
H4JYY8G   1 0.7 Undoped Si 0.3 1 1 umonyx/Intel LASOR/PhASER, oxidation smooth
                   

III/V wafer table
Wafer ID PL(nm) Data and spec-sheet # bought # remaining Supplier Note
GLDA0908271-C 1545   5 3 LandMark LASOR/PhASER 200nm SCH with center QW
             
             

Silicon wafer table
Wafer ID Diameter (inches) Thickness (um) Orientation Dopant Species Resistivity (ohm-cm) # bought # remaining Supplier Note
n/a 4 500 100 As 0.001 - 0.005 25 25 University Wafer CEEM - Si Nanowires
n/a 3 380 111 Sb 0.019 - 0.025 20 20 University Wafer CEEM - Si Nanowires