Difference between revisions of "Via definition"
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Back to [[Process_Hybrid_Silicon]]. | Back to [[Process_Hybrid_Silicon]]. | ||
| + | |||
| + | ==Current Processes== | ||
| + | ===Buffer Process=== | ||
| + | Via litho (Via mask) | ||
| + | Solvent clean | ||
| + | Ace, ISO, DI | ||
| + | PE2 O2 descum | ||
| + | 300 mT, 100 W, 1 min | ||
| + | Dehydration bake | ||
| + | 5 min @ 150 C | ||
| + | Spin resist | ||
| + | Blow sample with N2 | ||
| + | Dispense SU8 | ||
| + | 10 sec @ 500 (100 rpm ramp), 30 sec @ 3K (300 rpm ramp) | ||
| + | Bake for 2 min @ 95 C | ||
| + | Expose in stepper | ||
| + | 0.5 sec, offset: -12 | ||
| + | Bake for 1 min @ 95 C | ||
| + | Develop in Su 8 developer | ||
| + | Dip and shake for 60 sec, pipet for 15 sec | ||
| + | ISO, DI | ||
| + | PE2 O2 descum | ||
| + | 300 mT, 100 W, 1 min | ||
| + | Inspect Via for opening. If not open, do 30 sec descums until open. | ||
| + | SU8 curing | ||
| + | Start @ 95 C | ||
| + | 5 min @ 150 C | ||
| + | 5 min @ 205 C | ||
| + | 30 min @ 260 C | ||
| + | 5 min @ 205 C | ||
| + | 5 min @ 150 C | ||
| + | Ramp to 95 C and let cool. | ||
| + | Descum/CF4/Descum: 30/30/15 sec (WARNING THIS ATTACKS EXPOSED Si, LIKE GRATINGS) | ||
| + | PE2 O2 descum | ||
| + | 300 mT, 200 W, 5 min | ||
| + | SiN deposition | ||
| + | Deposit 3000A of SiN | ||
| + | Litho (Via mask) | ||
| + | Solvent clean | ||
| + | Ace, ISO, DI | ||
| + | PE2 O2 descum | ||
| + | 300 mT, 100 W, 1 min | ||
| + | Dehydration bake | ||
| + | 5 min @ 150 C | ||
| + | Spin resist | ||
| + | Blow sample with N2 | ||
| + | Dispense HMDS | ||
| + | Spin for 30 sec @ 3K | ||
| + | Blow sample with N2 | ||
| + | Dispense nLOF2020 | ||
| + | Spin for 30 sec @ 3K | ||
| + | Bake for 60 sec @ 110 C | ||
| + | Expose in stepper | ||
| + | 0.11 sec, offset: -12 | ||
| + | Bake for 90 sec @ 110C | ||
| + | Develop in AZ300MIF for 1 min | ||
| + | SiN etch in PE2 (3000A via adhesion + 3000A implant HM) | ||
| + | Descum/CF4/Descum: 1/8.5/1 min | ||
| + | |||
| + | ==Process Development Summary== | ||
| + | There is a thin SU-8 Process developed for sweeper | ||
| + | |||
| + | ==Future Untested Processes== | ||
| + | BCB/SOG Etch Back Process...in progress | ||
| + | |||
| + | [[file:Pietro_07262011.pptx]] | ||
Latest revision as of 19:49, 27 October 2011
Back to Process_Hybrid_Silicon.
Contents
Current Processes[edit]
Buffer Process[edit]
Via litho (Via mask)
Solvent clean
Ace, ISO, DI
PE2 O2 descum
300 mT, 100 W, 1 min
Dehydration bake
5 min @ 150 C
Spin resist
Blow sample with N2
Dispense SU8
10 sec @ 500 (100 rpm ramp), 30 sec @ 3K (300 rpm ramp)
Bake for 2 min @ 95 C
Expose in stepper
0.5 sec, offset: -12
Bake for 1 min @ 95 C
Develop in Su 8 developer
Dip and shake for 60 sec, pipet for 15 sec
ISO, DI
PE2 O2 descum
300 mT, 100 W, 1 min
Inspect Via for opening. If not open, do 30 sec descums until open.
SU8 curing
Start @ 95 C
5 min @ 150 C
5 min @ 205 C
30 min @ 260 C
5 min @ 205 C
5 min @ 150 C
Ramp to 95 C and let cool.
Descum/CF4/Descum: 30/30/15 sec (WARNING THIS ATTACKS EXPOSED Si, LIKE GRATINGS)
PE2 O2 descum
300 mT, 200 W, 5 min
SiN deposition
Deposit 3000A of SiN
Litho (Via mask)
Solvent clean
Ace, ISO, DI
PE2 O2 descum
300 mT, 100 W, 1 min
Dehydration bake
5 min @ 150 C
Spin resist
Blow sample with N2
Dispense HMDS
Spin for 30 sec @ 3K
Blow sample with N2
Dispense nLOF2020
Spin for 30 sec @ 3K
Bake for 60 sec @ 110 C
Expose in stepper
0.11 sec, offset: -12
Bake for 90 sec @ 110C
Develop in AZ300MIF for 1 min
SiN etch in PE2 (3000A via adhesion + 3000A implant HM)
Descum/CF4/Descum: 1/8.5/1 min
Process Development Summary[edit]
There is a thin SU-8 Process developed for sweeper
Future Untested Processes[edit]
BCB/SOG Etch Back Process...in progress
