Difference between revisions of "Via definition"
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==Current Processes== | ==Current Processes== | ||
+ | ===Buffer Process=== | ||
Via litho (Via mask) | Via litho (Via mask) | ||
Solvent clean | Solvent clean | ||
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==Process Development Summary== | ==Process Development Summary== | ||
− | + | There is a thin SU-8 Process developed for sweeper | |
+ | |||
==Future Untested Processes== | ==Future Untested Processes== | ||
− | + | BCB/SOG Etch Back Process...in progress | |
+ | |||
+ | [[file:Pietro_07262011.pptx]] |
Latest revision as of 19:49, 27 October 2011
Back to Process_Hybrid_Silicon.
Contents
Current Processes[edit]
Buffer Process[edit]
Via litho (Via mask) Solvent clean Ace, ISO, DI PE2 O2 descum 300 mT, 100 W, 1 min Dehydration bake 5 min @ 150 C Spin resist Blow sample with N2 Dispense SU8 10 sec @ 500 (100 rpm ramp), 30 sec @ 3K (300 rpm ramp) Bake for 2 min @ 95 C Expose in stepper 0.5 sec, offset: -12 Bake for 1 min @ 95 C Develop in Su 8 developer Dip and shake for 60 sec, pipet for 15 sec ISO, DI PE2 O2 descum 300 mT, 100 W, 1 min Inspect Via for opening. If not open, do 30 sec descums until open. SU8 curing Start @ 95 C 5 min @ 150 C 5 min @ 205 C 30 min @ 260 C 5 min @ 205 C 5 min @ 150 C Ramp to 95 C and let cool. Descum/CF4/Descum: 30/30/15 sec (WARNING THIS ATTACKS EXPOSED Si, LIKE GRATINGS) PE2 O2 descum 300 mT, 200 W, 5 min SiN deposition Deposit 3000A of SiN Litho (Via mask) Solvent clean Ace, ISO, DI PE2 O2 descum 300 mT, 100 W, 1 min Dehydration bake 5 min @ 150 C Spin resist Blow sample with N2 Dispense HMDS Spin for 30 sec @ 3K Blow sample with N2 Dispense nLOF2020 Spin for 30 sec @ 3K Bake for 60 sec @ 110 C Expose in stepper 0.11 sec, offset: -12 Bake for 90 sec @ 110C Develop in AZ300MIF for 1 min SiN etch in PE2 (3000A via adhesion + 3000A implant HM) Descum/CF4/Descum: 1/8.5/1 min
Process Development Summary[edit]
There is a thin SU-8 Process developed for sweeper
Future Untested Processes[edit]
BCB/SOG Etch Back Process...in progress