Difference between revisions of "Wafer Table (old)"
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m (Aspott moved page Wafer Table to Wafer Table (old): Old wafer table last modified on 28 September 2012, at 22:23. Retain for reference for now.) |
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| 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2 || SOITEC+LSRL || || || || | | 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2 || SOITEC+LSRL || || || || | ||
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| − | | 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || | + | | 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || 12 || SOITEC || Ask Sudha, 8" || || Femto Lab || |
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! Wafer ID !! PL(nm) !! Data and spec-sheet !! Size (in) !! # bought !! # remaining !! Supplier !! Note | ! Wafer ID !! PL(nm) !! Data and spec-sheet !! Size (in) !! # bought !! # remaining !! Supplier !! Note | ||
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| L3LDA1203272 || 1547.6 || [[media:report_0711281-E.pdf|Epi1]] || 2 || 3 || 2.25 || LandMark || EPHI-Epi1 125nm SCH with 8 centered QW's, graded contact layer. | | L3LDA1203272 || 1547.6 || [[media:report_0711281-E.pdf|Epi1]] || 2 || 3 || 2.25 || LandMark || EPHI-Epi1 125nm SCH with 8 centered QW's, graded contact layer. | ||
Latest revision as of 16:56, 24 November 2014
| Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Doped Si | Undoped Si | # bought | # remaining | Supplier | Note | User/# needed | Location | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1M22349.1 | 799 | 1 | 1.5 | B | P | 10 | 8 | SOITEC | 8" diameter | Molly's Desk | ||
| 1I29437.1 | 675 | 1 | 0.7 | 0.2um 1E14 B | 0.5um 1E10 | 21 | 4 | SOITEC+LSRL | 4" | ESB 2221A | ||
| 1H74447.1 | 675 | 1 | 0.7 | 0.3um 1E14 p type | 0.4um 1E10 | 10 | 2 | SOITEC+LSRL | ||||
| 1N43222.1 | 675 | 1 | 0.7 | <1E14 p type | na | 25 | 12 | SOITEC | Ask Sudha, 8" | Femto Lab |
| Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Details of device layer | Rib Etch (um) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|---|---|
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1/4 | Numonyx/Intel | LASOR/PhASER | |
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.4 | 1 | 1 | Numonyx/Intel | LASOR/PhASER | |
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1 | Numonyx/Intel | LASOR/PhASER, oxidation smooth |
| Wafer ID | PL(nm) | Data and spec-sheet | Size (in) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|
| L3LDA1203272 | 1547.6 | Epi1 | 2 | 3 | 2.25 | LandMark | EPHI-Epi1 125nm SCH with 8 centered QW's, graded contact layer. |
| L3LDA1203272 | 1545.8 | Epi2 | 2 | 3 | 2.25 | LandMark | EPHI-Epi2 graded 100nm SCH with 7 centered QW's. |
| GLDA1209083 | 1548.7 | Epi3 | 2 | 3 | 3 | LandMark | EPHI-Epi3 125nm SCH with 6 centered QW's, graded contact layer and 250nm N-layer. |
| GLDA0908271-C | 1545 | 2 | 5 | 1? | LandMark | LASOR/PhASER 200nm SCH with center QW, see Quotes & Spec Sheets | |
| PULSAR1 | ~1030 | 3 | 2.75 | 1.5 | LandMark | PULSAR | |
| PULSAR2 | ~1030 | 3 | 2 | 1.5 | LandMark | PULSAR |
| Wafer ID | Diameter (inches) | Thickness (um) | Orientation | Dopant Species | Resistivity (ohm-cm) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|---|---|
| n/a | 4 | 500 | 100 | As | 0.001 - 0.005 | 25 | 25 | University Wafer | CEEM - Si Nanowires |
| n/a | 3 | 380 | 111 | Sb | 0.019 - 0.025 | 20 | 20 | University Wafer | CEEM - Si Nanowires |
