Difference between revisions of "E-beam Litho recipe"
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====ZEP 520A positive resist==== | ====ZEP 520A positive resist==== | ||
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*1)spin HMDS 5000 rpm 30sec | *1)spin HMDS 5000 rpm 30sec | ||
| − | *2)spin ZEP 520A | + | *2)spin ZEP 520A 5000 rpm 30sec (~300nm) |
*3)softbake 180C 5min | *3)softbake 180C 5min | ||
| − | *4)Exposure dosage: 450 uC/cm2 | + | *4)deposit 100A of Au in thermal evaporator |
| − | * | + | *5)Exposure dosage: 450 uC/cm2 |
| + | *6)Etch Au in Gold Etchant for 10 sec | ||
| + | *7)Develpment: | ||
MIBK:Iso=1:1 , 60sec | MIBK:Iso=1:1 , 60sec | ||
MIBK:Iso=9:1 , 20sec | MIBK:Iso=9:1 , 20sec | ||
| − | * | + | *8)Si etch in DRIE chamber |
recipe:MITB_01 | recipe:MITB_01 | ||
C4F8/SF6/Ar=56/24/20sccm | C4F8/SF6/Ar=56/24/20sccm | ||
Latest revision as of 23:55, 13 May 2011
ZEP 520A positive resist[edit]
- 1)spin HMDS 5000 rpm 30sec
- 2)spin ZEP 520A 5000 rpm 30sec (~300nm)
- 3)softbake 180C 5min
- 4)deposit 100A of Au in thermal evaporator
- 5)Exposure dosage: 450 uC/cm2
- 6)Etch Au in Gold Etchant for 10 sec
- 7)Develpment:
MIBK:Iso=1:1 , 60sec MIBK:Iso=9:1 , 20sec
- 8)Si etch in DRIE chamber
recipe:MITB_01
C4F8/SF6/Ar=56/24/20sccm
ICP/CCP power=850W/18W
Pressure= 19mT
Temperature:10C/40C
Etch rate: ZEP: 37nm/min
Silicon: 100nm/min
