Difference between revisions of "Via definition"

Revision as of 19:37, 27 October 2011

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Current Processes

    Via litho (Via mask)
         Solvent clean
              Ace, ISO, DI
         PE2 O2 descum
              300 mT, 100 W, 1 min
         Dehydration bake
              5 min @ 150 C
         Spin resist
              Blow sample with N2
              Dispense SU8
                   10 sec @ 500 (100 rpm ramp), 30 sec @ 3K (300 rpm ramp)
              Bake for 2 min @ 95 C
         Expose in stepper
              0.5 sec, offset: -12
         Bake for 1 min @ 95 C
         Develop in Su 8 developer
              Dip and shake for 60 sec, pipet for 15 sec
         ISO, DI
         PE2 O2 descum
              300 mT, 100 W, 1 min
    Inspect Via for opening. If not open, do 30 sec descums until open.
    SU8 curing
         Start @ 95 C
         5 min @ 150 C
         5 min @ 205 C
         30 min @ 260 C
         5 min @ 205 C
         5 min @ 150 C
         Ramp to 95 C and let cool.
    Descum/CF4/Descum: 30/30/15 sec (WARNING THIS ATTACKS EXPOSED Si, LIKE GRATINGS)
    PE2 O2 descum
         300 mT, 200 W, 5 min
    SiN deposition
         Deposit 3000A of SiN
    Litho (Via mask)
         Solvent clean
              Ace, ISO, DI
         PE2 O2 descum
              300 mT, 100 W, 1 min
    Dehydration bake
         5 min @ 150 C
    Spin resist
         Blow sample with N2
         Dispense HMDS
         Spin for 30 sec @ 3K
         Blow sample with N2
         Dispense nLOF2020
         Spin for 30 sec @ 3K
         Bake for 60 sec @ 110 C
         Expose in stepper
              0.11 sec, offset: -12
    Bake for 90 sec @ 110C
    Develop in AZ300MIF for 1 min
         SiN etch in PE2 (3000A via adhesion + 3000A implant HM)
    Descum/CF4/Descum: 1/8.5/1 min

Process Development Summary

There is a thin SU-8 Process developed for sweeper

Future Untested Processes

       3.1 Sweeper Two Etch Depth Grating Process (INCOMPLETE)