Difference between revisions of "Epitaxy layer design"
From OptoelectronicsWiki
(→Electron Blocking Layer) |
(→Suggestions for revisions) |
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==Suggestions for revisions== | ==Suggestions for revisions== | ||
| − | ===Electron | + | ===Electron blocking layer=== |
Better electron confinement | Better electron confinement | ||
==== Advantage ==== | ==== Advantage ==== | ||
| Line 9: | Line 9: | ||
==== Disadvantage ==== | ==== Disadvantage ==== | ||
- one more layer | - one more layer | ||
| + | |||
| + | ===Etch stop layer=== | ||
| + | |||
| + | ===Undercut layer to define current channel=== | ||
Revision as of 11:09, 16 December 2011
Back to Process_Hybrid_Silicon.
Contents
Current EPI Structure
Suggestions for revisions
Electron blocking layer
Better electron confinement
Advantage
- Better high temperature performance
- Lower threshold
- Improved quantum efficiency
Disadvantage
- one more layer
