Difference between revisions of "HSP priority list"
From OptoelectronicsWiki
Line 17: | Line 17: | ||
==Issues brought up in meetings== | ==Issues brought up in meetings== | ||
+ | |||
+ | ===20/01/2012=== | ||
+ | * AR (Sudha): Process follower to Jon P. & Martijn (incl. wafer details: who, where, version. etc.) | ||
+ | * Epi order: 3 2" wafers per epi design, 2mm spacing between dies | ||
+ | ** Landmark uses 5nm QW, but index too low for us --> go to 6nm | ||
+ | |||
===13/01/2012=== | ===13/01/2012=== | ||
* Sudha/Yongbo.: should we undercut to define the current channel? | * Sudha/Yongbo.: should we undercut to define the current channel? |
Revision as of 13:02, 20 January 2012
Contents
Agenda & Priority List
Back to Process Hybrid Silicon.
Priority list
- Process development:
- Etch-back module (Jock, Jared)
- Need to converge on process follower (Excel?) -> start with Si etch / VC etch / bonding
- III/V epi design
- Finalize design
- Order epi
- III/V SOA design
- III/V SOA mask design (UCSB-E-Phi-dev-2 @ UCSB E-Phi Runs)
- Issue: Epi will arrive > 3 months -> test process follower with OPSIS run?
- SOI passives run fabrication
Issues brought up in meetings
20/01/2012
- AR (Sudha): Process follower to Jon P. & Martijn (incl. wafer details: who, where, version. etc.)
- Epi order: 3 2" wafers per epi design, 2mm spacing between dies
- Landmark uses 5nm QW, but index too low for us --> go to 6nm
13/01/2012
- Sudha/Yongbo.: should we undercut to define the current channel?
- (Martijn) high risk
- REFERENCE EPI: centered QW, similar to past epi + top etch-stop layer + InGaAsP contact helper(?)
- HIGH RISK EPI: e-block layers, GRINSCH
- Jon P.: Resist difficult to remove after Si-doping implants
- can remove with long strip, pirhana (hot)
- long-term: move to thin SiO2 underlayer (implant through this) and remove with BHF
- Jared H.: edge bead (may not be an issue, esp. for 4" wafer processing - use stayout of 5-10mm)
- for small samples, can surround with additional chips during spin
06/01/2012
- Jon P.: Resist nonuniformity for multiple-die exposure -> >= 1-cm stay-out area?
- Jock: Grating module works for etch depths < 120 nm
- Bandgap issue: PL peak is not equal to lasing wavelength, and lasing wavelength is not equal to SOA gain maximum
- First have nice gain spectrum before we discuss further