Difference between revisions of "Wafer Table (old)"

From OptoelectronicsWiki
Jump to: navigation, search
Line 9: Line 9:
 
|-
 
|-
 
| 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2+1/3+1/3 || SOITEC ||   ||   ||
 
| 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2+1/3+1/3 || SOITEC ||   ||   ||
|-
 
| 1H74447.1 || 675 || 1 || 0.6 || 0.3um 1E14 p type|| 0.3um 1E10|| 5 || 3 || SOITEC ||   || Sudha/5 ||
 
|-
 
| 1H74447.1 || 675 || 1 || 0.55 || 0.3um 1E14 p type|| 0.25um 1E10|| 10 || 3 || SOITEC ||   ||   ||
 
|-
 
| 1G47090.1 || 675 || 1 || 1 || 0.3um 1E14 p type|| 0.7um 1E10|| 10 || 2 || SOITEC ||   ||   ||
 
 
|-
 
|-
 
| 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || 25 || SOITEC || Ask Sudha, 8" || &nbsp; ||
 
| 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || 25 || SOITEC || Ask Sudha, 8" || &nbsp; ||
 
|-
 
|-
 
| &nbsp; || 675 || 3 || 1 || 0.25um 1E14 p type|| 0.75um 1E10|| 10 || 7+1/2+1/2 || SOITEC || &nbsp; || &nbsp; ||
 
| &nbsp; || 675 || 3 || 1 || 0.25um 1E14 p type|| 0.75um 1E10|| 10 || 7+1/2+1/2 || SOITEC || &nbsp; || &nbsp; ||
|-
 
| &nbsp; || 675 || 0.8 or 1.3 || 0.5 || - || - || need 5 || 0 || ideally SOITEC || SWEEPER || Martijn/JKD ||
 
|-
 
| &nbsp; || 675 || 2 or 1.4 || 0.22 or 0.25 || - || - || - || 0 || SOITEC || grating coupler/PR || Yongbo/4 ||
 
 
|-
 
|-
 
|}
 
|}

Revision as of 10:47, 30 June 2012

SOI wafer table
Wafer ID Substrate(um) BOX(um) Device layer (um) Doped Si Undoped Si # bought # remaining Supplier Note User/# needed
1M22349.1 799 1 1.5 B P 10 8 SOITEC 8" diameter  
1I29437.1 675 1 0.7 0.2um 1E14 B 0.5um 1E10 21 10 SOITEC+LSRL    
1H74447.1 675 1 0.7 0.3um 1E14 p type 0.4um 1E10 10 2+1/3+1/3 SOITEC    
1N43222.1 675 1 0.7 <1E14 p type na 25 25 SOITEC Ask Sudha, 8"  
  675 3 1 0.25um 1E14 p type 0.75um 1E10 10 7+1/2+1/2 SOITEC    
SOI patterned wafer table
Wafer ID Substrate(um) BOX(um) Device layer (um) Details of device layer Rib Etch (um) # bought # remaining Supplier Note
H4JYY8G   1 0.7 Undoped Si 0.3 1 1/4 Numonyx/Intel LASOR/PhASER
H4JYY8G   1 0.7 Undoped Si 0.4 1 1 Numonyx/Intel LASOR/PhASER
H4JYY8G   1 0.7 Undoped Si 0.3 1 1 Numonyx/Intel LASOR/PhASER, oxidation smooth

III/V wafer table
Wafer ID PL(nm) Data and spec-sheet Size (in) # bought # remaining Supplier Note
GLDA0908271-C 1545   2 5 1? LandMark LASOR/PhASER 200nm SCH with center QW, see Quotes & Spec Sheets
PULSAR1 ~1030   3 2.75 1.5 LandMark PULSAR
PULSAR2 ~1030   3 2 1.5 LandMark PULSAR

Silicon wafer table
Wafer ID Diameter (inches) Thickness (um) Orientation Dopant Species Resistivity (ohm-cm) # bought # remaining Supplier Note
n/a 4 500 100 As 0.001 - 0.005 25 25 University Wafer CEEM - Si Nanowires
n/a 3 380 111 Sb 0.019 - 0.025 20 20 University Wafer CEEM - Si Nanowires