Difference between revisions of "E-Beam Lithography (EBL)"
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* [[media:Proximity Effect Correction for Electron Beam Lithography.ppt|Proximity Effect Correction Experiment Updated]] | * [[media:Proximity Effect Correction for Electron Beam Lithography.ppt|Proximity Effect Correction Experiment Updated]] | ||
| − | * [[Proximity Correct PPT Past Versions]] | + | * [[Proximity Correct PPT Past Versions]] |
Revision as of 15:38, 20 February 2013
Proximity Correction
- Process overview: File:SWEEPER4-1 v4.ppt
- SEMs of Pure ZEP dosage array: File:Pure ZEP SEMs.zip
- SEMs of 2:1 ZEP dosage array: File:2 to 1 ZEP SEMs.zip
login to BEAMER server:
128.111.192.142
u:bowers
p:femto
Run a monte carlo simulation of the "substrate" and resist you are using in MC^3.
For example: ZEP(2k) on 500nm SOI with 1um BOx.
1) Use the drop down tab to select PENELOPE.
2) Build your layer stack in the PELELOPE GUI. z-Resolution must be an integer multiple of the thickness.
3) Check Save the result for the resist layer, for this example we have saved the "ZEP520_" layer
Return to Cleanroom_Equipment
