Difference between revisions of "Wafer Table (old)"
From OptoelectronicsWiki
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|+ '''SOI wafer table''' | |+ '''SOI wafer table''' | ||
|- style="background:red; color:white" | |- style="background:red; color:white" | ||
| − | ! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! | + | ! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note |
|- | |- | ||
| − | | 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B | + | | 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B || 0.5um 1E10|| 21 || 18 || SOITEC+LSRL || |
|- | |- | ||
| − | | 1I29437.1 || 675 || 1 || 0.4 || 0.2um 1E14 B | + | | 1I29437.1 || 675 || 1 || 0.4 || 0.2um 1E14 B || 0.2um 1E10|| 4 || 0 || SOITEC+LSRL || |
|- | |- | ||
| + | | 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2+1/3+1/3 || SOITEC || | ||
| + | |- | ||
| + | | 1H74447.1 || 675 || 1 || 0.6 || 0.3um 1E14 p type|| 0.6um 1E10|| 5 || 3 || SOITEC || | ||
| + | |- | ||
| + | | 1H74447.1 || 675 || 1 || 0.55 || 0.3um 1E14 p type|| 0.25um 1E10|| 10 || 3 || SOITEC || | ||
| + | |- | ||
| + | |||
|} | |} | ||
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| H4JYY8G || || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1/4 || umonyx/Intel || LASOR/PhASER | | H4JYY8G || || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1/4 || umonyx/Intel || LASOR/PhASER | ||
| − | | | + | |- |
| H4JYY8G || || 1 || 0.7 || Undoped Si || 0.4 || 1 || 1 || umonyx/Intel || LASOR/PhASER | | H4JYY8G || || 1 || 0.7 || Undoped Si || 0.4 || 1 || 1 || umonyx/Intel || LASOR/PhASER | ||
|- | |- | ||
Revision as of 16:49, 31 March 2010
| Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Doped Si | Undoped Si | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|---|---|
| 1I29437.1 | 675 | 1 | 0.7 | 0.2um 1E14 B | 0.5um 1E10 | 21 | 18 | SOITEC+LSRL | |
| 1I29437.1 | 675 | 1 | 0.4 | 0.2um 1E14 B | 0.2um 1E10 | 4 | 0 | SOITEC+LSRL | |
| 1H74447.1 | 675 | 1 | 0.7 | 0.3um 1E14 p type | 0.4um 1E10 | 10 | 2+1/3+1/3 | SOITEC | |
| 1H74447.1 | 675 | 1 | 0.6 | 0.3um 1E14 p type | 0.6um 1E10 | 5 | 3 | SOITEC | |
| 1H74447.1 | 675 | 1 | 0.55 | 0.3um 1E14 p type | 0.25um 1E10 | 10 | 3 | SOITEC |
| Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Details of device layer | Rib Etch (um) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|---|---|
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1/4 | umonyx/Intel | LASOR/PhASER | |
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.4 | 1 | 1 | umonyx/Intel | LASOR/PhASER | |
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1 | umonyx/Intel | LASOR/PhASER, oxidation smooth | |
| Wafer ID | Layerstack | Data and spec-sheet | # bought | # remaining | Supplier | Design/simulation results |
|---|---|---|---|---|---|---|
| GLDA0908271-C | 5 | 3 | LandMark | |||
