Difference between revisions of "E-beam Litho recipe"
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| + | ====ZEP 520A positive resist==== | ||
| + | |||
ZEP 520A positive resist | ZEP 520A positive resist | ||
| − | 1)spin HMDS 5000 rpm 30sec | + | *1)spin HMDS 5000 rpm 30sec |
| − | 2)spin ZEP 520A 5000rmp 30sec (~300nm) | + | *2)spin ZEP 520A 5000rmp 30sec (~300nm) |
| − | 3)softbake 180C 5min | + | *3)softbake 180C 5min |
| − | 4)Exposure dosage: 450 uC/cm2 | + | *4)Exposure dosage: 450 uC/cm2 |
| − | 5)Develpment: | + | *5)Develpment: |
MIBK:Iso=1:1 , 60sec | MIBK:Iso=1:1 , 60sec | ||
MIBK:Iso=9:1 , 20sec | MIBK:Iso=9:1 , 20sec | ||
| − | 6)Si etch in DRIE chamber | + | *6)Si etch in DRIE chamber |
recipe:MITB_01 | recipe:MITB_01 | ||
C4F8/SF6/Ar=56/24/20sccm | C4F8/SF6/Ar=56/24/20sccm | ||
Revision as of 15:15, 24 November 2010
ZEP 520A positive resist
ZEP 520A positive resist
- 1)spin HMDS 5000 rpm 30sec
- 2)spin ZEP 520A 5000rmp 30sec (~300nm)
- 3)softbake 180C 5min
- 4)Exposure dosage: 450 uC/cm2
- 5)Develpment:
MIBK:Iso=1:1 , 60sec MIBK:Iso=9:1 , 20sec
- 6)Si etch in DRIE chamber
recipe:MITB_01
C4F8/SF6/Ar=56/24/20sccm
ICP/CCP power=850W/18W
Pressure= 19mT
Temperature:10C/40C
Etch rate: ZEP: 37nm/min
Silicon: 100nm/min
