Difference between revisions of "Via definition"
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==Current Processes== | ==Current Processes== | ||
| − | + | Via litho (Via mask) | |
| − | + | Solvent clean | |
| − | + | Ace, ISO, DI | |
| − | + | PE2 O2 descum | |
| − | + | 300 mT, 100 W, 1 min | |
| − | + | Dehydration bake | |
| − | + | 5 min @ 150 C | |
| − | + | Spin resist | |
| − | + | Blow sample with N2 | |
| − | + | Dispense SU8 | |
| − | + | 10 sec @ 500 (100 rpm ramp), 30 sec @ 3K (300 rpm ramp) | |
| − | + | Bake for 2 min @ 95 C | |
| − | + | Expose in stepper | |
| − | + | 0.5 sec, offset: -12 | |
| − | + | Bake for 1 min @ 95 C | |
| − | + | Develop in Su 8 developer | |
| − | + | Dip and shake for 60 sec, pipet for 15 sec | |
| − | + | ISO, DI | |
| − | + | PE2 O2 descum | |
| − | + | 300 mT, 100 W, 1 min | |
| − | + | Inspect Via for opening. If not open, do 30 sec descums until open. | |
| − | + | SU8 curing | |
| − | + | Start @ 95 C | |
| − | + | 5 min @ 150 C | |
| − | + | 5 min @ 205 C | |
| − | + | 30 min @ 260 C | |
| − | + | 5 min @ 205 C | |
| − | + | 5 min @ 150 C | |
| − | + | Ramp to 95 C and let cool. | |
| − | + | Descum/CF4/Descum: 30/30/15 sec (WARNING THIS ATTACKS EXPOSED Si, LIKE GRATINGS) | |
| − | + | PE2 O2 descum | |
| − | + | 300 mT, 200 W, 5 min | |
| − | + | SiN deposition | |
| − | + | Deposit 3000A of SiN | |
| − | + | Litho (Via mask) | |
| − | + | Solvent clean | |
| − | + | Ace, ISO, DI | |
| − | + | PE2 O2 descum | |
| − | + | 300 mT, 100 W, 1 min | |
| − | + | Dehydration bake | |
| − | + | 5 min @ 150 C | |
| − | + | Spin resist | |
| − | + | Blow sample with N2 | |
| − | + | Dispense HMDS | |
| − | + | Spin for 30 sec @ 3K | |
| − | + | Blow sample with N2 | |
| − | + | Dispense nLOF2020 | |
| − | + | Spin for 30 sec @ 3K | |
| − | + | Bake for 60 sec @ 110 C | |
| − | + | Expose in stepper | |
| − | + | 0.11 sec, offset: -12 | |
| − | + | Bake for 90 sec @ 110C | |
| − | + | Develop in AZ300MIF for 1 min | |
| − | + | SiN etch in PE2 (3000A via adhesion + 3000A implant HM) | |
| − | + | Descum/CF4/Descum: 1/8.5/1 min | |
| − | + | ||
==Process Development Summary== | ==Process Development Summary== | ||
Revision as of 19:36, 27 October 2011
Back to Process_Hybrid_Silicon.
Current Processes
Via litho (Via mask)
Solvent clean
Ace, ISO, DI
PE2 O2 descum
300 mT, 100 W, 1 min
Dehydration bake
5 min @ 150 C
Spin resist
Blow sample with N2
Dispense SU8
10 sec @ 500 (100 rpm ramp), 30 sec @ 3K (300 rpm ramp)
Bake for 2 min @ 95 C
Expose in stepper
0.5 sec, offset: -12
Bake for 1 min @ 95 C
Develop in Su 8 developer
Dip and shake for 60 sec, pipet for 15 sec
ISO, DI
PE2 O2 descum
300 mT, 100 W, 1 min
Inspect Via for opening. If not open, do 30 sec descums until open.
SU8 curing
Start @ 95 C
5 min @ 150 C
5 min @ 205 C
30 min @ 260 C
5 min @ 205 C
5 min @ 150 C
Ramp to 95 C and let cool.
Descum/CF4/Descum: 30/30/15 sec (WARNING THIS ATTACKS EXPOSED Si, LIKE GRATINGS)
PE2 O2 descum
300 mT, 200 W, 5 min
SiN deposition
Deposit 3000A of SiN
Litho (Via mask)
Solvent clean
Ace, ISO, DI
PE2 O2 descum
300 mT, 100 W, 1 min
Dehydration bake
5 min @ 150 C
Spin resist
Blow sample with N2
Dispense HMDS
Spin for 30 sec @ 3K
Blow sample with N2
Dispense nLOF2020
Spin for 30 sec @ 3K
Bake for 60 sec @ 110 C
Expose in stepper
0.11 sec, offset: -12
Bake for 90 sec @ 110C
Develop in AZ300MIF for 1 min
SiN etch in PE2 (3000A via adhesion + 3000A implant HM)
Descum/CF4/Descum: 1/8.5/1 min
Process Development Summary
2.1 Dose/Duty Cycle Analysis with Proximity Effect Observations
Future Untested Processes
3.1 Sweeper Two Etch Depth Grating Process (INCOMPLETE)
