Difference between revisions of "Epitaxy layer design"
From OptoelectronicsWiki
(→Electron Blocking Layer) |
(→Electron Blocking Layer) |
||
Line 4: | Line 4: | ||
==Suggestions for revisions== | ==Suggestions for revisions== | ||
===Electron Blocking Layer=== | ===Electron Blocking Layer=== | ||
− | + | Better electron confinement | |
− | + | ==== Advantage ==== | |
− | + | - Better high temperature performance <br> - Lower threshold <br> - Improved quantum efficiency | |
− | + | ==== Disadvantage ==== | |
− | + | - one more layer | |
− | + | ||
− | + |
Revision as of 11:07, 16 December 2011
Back to Process_Hybrid_Silicon.
Contents
Current EPI Structure
Suggestions for revisions
Electron Blocking Layer
Better electron confinement
Advantage
- Better high temperature performance
- Lower threshold
- Improved quantum efficiency
Disadvantage
- one more layer