Difference between revisions of "Epitaxy layer design"

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(Suggestions for revisions)
(Suggestions for revisions)
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==Suggestions for revisions==
 
==Suggestions for revisions==
===Electron blocking layer===
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[[media:SOA_EPI_DESIGN.pptx|12/16/2011_HSP]]
Better electron confinement
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==== Advantage ====
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- Better high temperature performance <br> - Lower threshold <br> - Improved quantum efficiency
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==== Disadvantage ====
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- one more layer
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===Etch stop layer===
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===Undercut layer to define current channel===
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Revision as of 11:58, 16 December 2011

Back to Process_Hybrid_Silicon.

Current EPI Structure

Suggestions for revisions

12/16/2011_HSP