Difference between revisions of "SOI grating definition"

Revision as of 15:04, 19 December 2011

Back to Process_Hybrid_Silicon.

Past Processes

Sweeper Vertical Grating Coupler Process

   Pre-clean: Remove native oxide and/or dielectric hardmask
       HF dip
   Ebeam PR spin coat (2:1 ZEP)
       ACE,ISO,DI   
       PEII - O2 Descum (100W, 300mTorr, 60sec)   
       Dehydration Bake (150C, 5min)   
       N2 Gun (1min)    Cools and cleans wafer
       Spin 2:1 ZEP (3000rpm, 30sec) - Recipe 5    ~225nm, Use a filtered syringe
       Pre-Exposure Bake (180C, 4min)    Cover hotplate top to prevent additional particulate
   Thermal Au Evaporation       
       Evaporate 11nm Au
   Ebeam Writing Conditions       
       4th Lens   
       Dose 350uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches if the substrate is not highly doped)
   Development       
       Remove Au in wet Au etchant    10s
       DI Rinse   
       N2 Dry   
       1:1 MIBK:ISO Development - 60s    Use a fresh batch
       9:1 MIBK:ISO Rinse - 15s    DO NOT RINSE WITH DI
       N2 Dry    DO NOT RINSE WITH DI
   Grating Etch       
       AFM etch depth calibration recommended   
       Single Step Bosch Etch Process - JTB_GR
       Rates:
       ~170nm/min w/o Sanovac 5
       ~141nm/min w/ Sanovac 5
   Strip ZEP (2:1)
       1165 Soak at 80C - 10min
       PEII - O2 Descum (100W, 300mTorr, 60sec)

Standard Hybrid Si Process

link to .xls

Process Development Summary

Dose/Duty Cycle Analysis with Proximity Effect Observations

File:2010-03-01 Grating Update.pptx

File:2010-12-07 Grating Update.pptx

Future Untested Processes

Sweeper Two Etch Depth Grating Process (UNTESTED)

   Oxide Hardmask Deposition - Advanced Vacuum PECVD 
       40nm Oxide
   Ebeam PR spin coat (2:1 ZEP)
       ACE,ISO,DI   
       PEII - O2 Descum (100W, 300mTorr, 60sec)   
       Dehydration Bake (150C, 5min)   
       N2 Gun (1min)    Cools and cleans wafer
       Spin 2:1 ZEP (3000rpm, 30sec) - Recipe 5    ~225nm, Use a filtered syringe
       Pre-Exposure Bake (180C, 4min)    Cover hotplate top to prevent additional particulate
   Conductive polymer spin coat
       Aquasave (3000 rpm, 30sec) - Recipe 5
       Pre-Exposure bake (90C, 30sec)
   Ebeam Writing Conditions       
       4th Lens   
       Dose 350uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches if the substrate is not highly doped)
   Development       
       DI Rinse - 60s Removes Aquasave   
       N2 Dry   
       1:1 MIBK:ISO Development - 60s    Use a fresh batch
       9:1 MIBK:ISO Rinse - 15s    DO NOT RINSE WITH DI
       N2 Dry    DO NOT RINSE WITH DI
   AFM Pattern Acknowledgement   
   Hardmask Etch - ICP#2
       Oxide Nano Etch - 110nm/min
   Grating Shallow Etch - Si Deep RIE Etcher (50nm)        
       Single step Bosch etch process - JTB_01
       Rates: ~170nm/min w/o Sanovac 5, ~141nm/min w/ Sanovac 5
   Add PR protection layer
       Spin AZ4210 (4000rpm, 30sec)
       Pre-Exposure Bake (95C, 1min)
       Lithography - Pattern a window in the deep etch region 
           Litho Tool: GCA Stepper / Autostepper
           Exposure: 3sec / 1sec (NEEDS CALIBRATION)
           Focus Offset: 0 (NEEDS CALIBRATION)
           NO POST-EXPOSURE BAKE
           Develop (AZ400K 1:4 diluted, 1min)
           DI Rinse
   OPEN OPTION...SHOULD WE RUN A O2 PLASMA CLEAN
   Grating Finish Deep Etch - Etch the difference in depths (deep target - shallow target)      
           AFM etch depth calibration recommended   
           Single step Bosch etch process - JTB_GR
           Rates: ~170nm/min w/o Sanovac 5, ~141nm/min w/ Sanovac 5
   Strip PR & ZEP (2:1)
       1165 Soak at 80C - 10min
       PEII - O2 Descum (100W, 300mTorr, 60sec)