Difference between revisions of "UCSB E-Phi Runs"
From OptoelectronicsWiki
| Line 27: | Line 27: | ||
===UCSB-E-Phi-test-2=== | ===UCSB-E-Phi-test-2=== | ||
III/V lasers and SOAs on SOI; | III/V lasers and SOAs on SOI; | ||
| + | Planning: | ||
| + | * 01/31 mask design finished; | ||
| + | * 02/29 fabrication finished; | ||
===UCSB-E-Phi-test-3=== | ===UCSB-E-Phi-test-3=== | ||
| Line 40: | Line 43: | ||
===UCSB-E-Phi-1=== | ===UCSB-E-Phi-1=== | ||
III/V gain on SOI; | III/V gain on SOI; | ||
| + | * 03/15 mask design finished; | ||
| + | * 04/31 fabrication finished; | ||
===UCSB-E-Phi-2=== | ===UCSB-E-Phi-2=== | ||
Revision as of 20:41, 20 December 2011
Contents
Planned runs for UCSB - E-Phi
Component test runs
UCSB-E-Phi-test-1
SOI only: test litho and bonding uniformity
Planning:
- 12/14 ideas due;
- 12/20 mask review;
- 01/03 send out mask order;
- 01/10 - 01/20 fabrication.
Components and structures
- Bonding test structures
- Patterns for bonding [Di, Martijn]
- SOI waveguide test structures
- Resolution markers, Taper tip test structure [Sudha]
- Loss test structures [Martijn]
- SOI component test structures
- MMIs [Martijn, Yongbo]
- Bends [Martijn]
- Offsets [Martijn]
- 10-GHz and 20-GHz ring filters/oscillators [Martijn]
- Other ideas
- WG crossing [Sid]
- Silicon nanowire tapers [Jock]
- Taper from 0.8um to 2.0um, change taper length/shape [Sid, Geza]
UCSB-E-Phi-test-2
III/V lasers and SOAs on SOI; Planning:
- 01/31 mask design finished;
- 02/29 fabrication finished;
UCSB-E-Phi-test-3
SOI passives coupled to ULLWs;
UCSB-E-Phi-test-4
EDWA test run;
UCSB-E-Phi-test-5
Isolator test run;
Shuttle runs
UCSB-E-Phi-1
III/V gain on SOI;
- 03/15 mask design finished;
- 04/31 fabrication finished;
UCSB-E-Phi-2
III/V gain and ULLWs on SOI;
UCSB-E-Phi-3
to be decided: either isolators or EDWAs on a III/V on SOI platform.
