Difference between revisions of "HSP priority list"
From OptoelectronicsWiki
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==Issues brought up in meetings== | ==Issues brought up in meetings== | ||
− | === | + | ===06/01/2012=== |
* Jon P.: Resist nonuniformity for multiple-die exposure -> >= 1-cm stay-out area? | * Jon P.: Resist nonuniformity for multiple-die exposure -> >= 1-cm stay-out area? | ||
* Jock: Grating module works for etch depths < 120 nm | * Jock: Grating module works for etch depths < 120 nm | ||
* Bandgap issue: PL peak is not equal to lasing wavelength, and lasing wavelength is not equal to SOA gain maximum | * Bandgap issue: PL peak is not equal to lasing wavelength, and lasing wavelength is not equal to SOA gain maximum | ||
** First have nice gain spectrum before we discuss further | ** First have nice gain spectrum before we discuss further |
Revision as of 19:44, 12 January 2012
Contents
Agenda & Priority List
Priority list
- Process development:
- Etch-back module (Jock, Jared)
- Need to
- III/V epi design
- Finalize design
- Order epi
- III/V SOA design
- III/V SOA mask design (UCSB-E-Phi-dev-2 @ UCSB E-Phi Runs)
- Issue: Epi will arrive > 3 months -> test process follower with OPSIS run?
Issues brought up in meetings
06/01/2012
- Jon P.: Resist nonuniformity for multiple-die exposure -> >= 1-cm stay-out area?
- Jock: Grating module works for etch depths < 120 nm
- Bandgap issue: PL peak is not equal to lasing wavelength, and lasing wavelength is not equal to SOA gain maximum
- First have nice gain spectrum before we discuss further