Difference between revisions of "HSP priority list"
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* Jon P.: Resist difficult to remove after Si-doping implants | * Jon P.: Resist difficult to remove after Si-doping implants | ||
| − | - can remove with long strip, pirhana (hot) | + | - can remove with long strip, pirhana (hot) <br> |
- long-term: move to thin SiO2 underlayer (implant through this) and remove with BHF | - long-term: move to thin SiO2 underlayer (implant through this) and remove with BHF | ||
* Jared H.: edge bead (may not be an issue, esp. for 4" wafer processing - use stayout of 5-10mm) | * Jared H.: edge bead (may not be an issue, esp. for 4" wafer processing - use stayout of 5-10mm) | ||
Revision as of 12:57, 13 January 2012
Contents
Agenda & Priority List
Back to Process Hybrid Silicon.
Priority list
- Process development:
- Etch-back module (Jock, Jared)
- Need to converge on process follower (Excel?)
- III/V epi design
- Finalize design
- Order epi
- III/V SOA design
- III/V SOA mask design (UCSB-E-Phi-dev-2 @ UCSB E-Phi Runs)
- Issue: Epi will arrive > 3 months -> test process follower with OPSIS run?
Issues brought up in meetings
13/01/2012
- Jon P.: Resist difficult to remove after Si-doping implants
- can remove with long strip, pirhana (hot)
- long-term: move to thin SiO2 underlayer (implant through this) and remove with BHF
- Jared H.: edge bead (may not be an issue, esp. for 4" wafer processing - use stayout of 5-10mm)
- for small samples, can surround with additional chips during spin
06/01/2012
- Jon P.: Resist nonuniformity for multiple-die exposure -> >= 1-cm stay-out area?
- Jock: Grating module works for etch depths < 120 nm
- Bandgap issue: PL peak is not equal to lasing wavelength, and lasing wavelength is not equal to SOA gain maximum
- First have nice gain spectrum before we discuss further
