Difference between revisions of "Wafer Table (old)"
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! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note !! User/# needed!!Location! | ! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Doped Si !! Undoped Si !! # bought !! # remaining !! Supplier !! Note !! User/# needed!!Location! | ||
|- | |- | ||
| − | | 1M22349.1 || 799 || 1 || 1.5 || B || P || 10 || 8 || SOITEC|| 8" diameter || Molly's Desk || | + | | 1M22349.1 || 799 || 1 || 1.5 || B || P || 10 || 8 || SOITEC|| 8" diameter || || Molly's Desk || |
|- | |- | ||
| − | | 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B || 0.5um 1E10|| 21 || 10 || SOITEC+LSRL || 4" || ESB 2221A || | + | | 1I29437.1 || 675 || 1 || 0.7 || 0.2um 1E14 B || 0.5um 1E10|| 21 || 10 || SOITEC+LSRL || 4" || || ESB 2221A || |
|- | |- | ||
| − | | 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2+1/3+1/3 || SOITEC || || || | + | | 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2+1/3+1/3 || SOITEC || || || || |
|- | |- | ||
| − | | 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || 25 || SOITEC || Ask Sudha, 8" || Femto Lab || | + | | 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || 25 || SOITEC || Ask Sudha, 8" || || Femto Lab || |
|- | |- | ||
| − | | || 675 || 3 || 1 || 0.25um 1E14 p type|| 0.75um 1E10|| 10 || 7+1/2+1/2 || SOITEC || || || | + | | || 675 || 3 || 1 || 0.25um 1E14 p type|| 0.75um 1E10|| 10 || 7+1/2+1/2 || SOITEC || || || || |
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|} | |} | ||
Revision as of 10:51, 30 June 2012
| Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Doped Si | Undoped Si | # bought | # remaining | Supplier | Note | User/# needed | Location! | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1M22349.1 | 799 | 1 | 1.5 | B | P | 10 | 8 | SOITEC | 8" diameter | Molly's Desk | ||
| 1I29437.1 | 675 | 1 | 0.7 | 0.2um 1E14 B | 0.5um 1E10 | 21 | 10 | SOITEC+LSRL | 4" | ESB 2221A | ||
| 1H74447.1 | 675 | 1 | 0.7 | 0.3um 1E14 p type | 0.4um 1E10 | 10 | 2+1/3+1/3 | SOITEC | ||||
| 1N43222.1 | 675 | 1 | 0.7 | <1E14 p type | na | 25 | 25 | SOITEC | Ask Sudha, 8" | Femto Lab | ||
| 675 | 3 | 1 | 0.25um 1E14 p type | 0.75um 1E10 | 10 | 7+1/2+1/2 | SOITEC |
| Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Details of device layer | Rib Etch (um) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|---|---|
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1/4 | Numonyx/Intel | LASOR/PhASER | |
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.4 | 1 | 1 | Numonyx/Intel | LASOR/PhASER | |
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1 | Numonyx/Intel | LASOR/PhASER, oxidation smooth |
| Wafer ID | PL(nm) | Data and spec-sheet | Size (in) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|
| GLDA0908271-C | 1545 | 2 | 5 | 1? | LandMark | LASOR/PhASER 200nm SCH with center QW, see Quotes & Spec Sheets | |
| PULSAR1 | ~1030 | 3 | 2.75 | 1.5 | LandMark | PULSAR | |
| PULSAR2 | ~1030 | 3 | 2 | 1.5 | LandMark | PULSAR |
| Wafer ID | Diameter (inches) | Thickness (um) | Orientation | Dopant Species | Resistivity (ohm-cm) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|---|---|
| n/a | 4 | 500 | 100 | As | 0.001 - 0.005 | 25 | 25 | University Wafer | CEEM - Si Nanowires |
| n/a | 3 | 380 | 111 | Sb | 0.019 - 0.025 | 20 | 20 | University Wafer | CEEM - Si Nanowires |
