Difference between revisions of "Wafer Table (old)"

Revision as of 10:52, 30 June 2012

**SOI wafer table**
Wafer ID	Substrate(um)	BOX(um)	Device layer (um)	Doped Si	Undoped Si	# bought	# remaining	Supplier	Note	Location
1M22349.1	799	1	1.5	B	P	10	8	SOITEC	8" diameter	Molly's Desk
1I29437.1	675	1	0.7	0.2um 1E14 B	0.5um 1E10	21	10	SOITEC+LSRL	4"	ESB 2221A
1H74447.1	675	1	0.7	0.3um 1E14 p type	0.4um 1E10	10	2+1/3+1/3	SOITEC
1N43222.1	675	1	0.7	<1E14 p type	na	25	19	SOITEC	Ask Sudha, 8"	Femto Lab
	675	3	1	0.25um 1E14 p type	0.75um 1E10	10	7+1/2+1/2	SOITEC

**SOI patterned wafer table**
Wafer ID	BOX(um)	Device layer (um)	Details of device layer	Rib Etch (um)	# bought	# remaining	Supplier	Note
H4JYY8G	1	0.7	Undoped Si	0.3	1	1/4	Numonyx/Intel	LASOR/PhASER
H4JYY8G	1	0.7	Undoped Si	0.4	1	1	Numonyx/Intel	LASOR/PhASER
H4JYY8G	1	0.7	Undoped Si	0.3	1	1	Numonyx/Intel	LASOR/PhASER, oxidation smooth

**III/V wafer table**
Wafer ID	PL(nm)	Size (in)	# bought	# remaining	Supplier	Note
GLDA0908271-C	1545	2	5	1?	LandMark	LASOR/PhASER 200nm SCH with center QW, see Quotes & Spec Sheets
PULSAR1	~1030	3	2.75	1.5	LandMark	PULSAR
PULSAR2	~1030	3	2	1.5	LandMark	PULSAR

**Silicon wafer table**
Wafer ID	Diameter (inches)	Thickness (um)	Orientation	Dopant Species	Resistivity (ohm-cm)	# bought	# remaining	Supplier	Note
n/a	4	500	100	As	0.001 - 0.005	25	25	University Wafer	CEEM - Si Nanowires
n/a	3	380	111	Sb	0.019 - 0.025	20	20	University Wafer	CEEM - Si Nanowires

@@ Line 10: / Line 10: @@
 | 1H74447.1 || 675 || 1 || 0.7 || 0.3um 1E14 p type|| 0.4um 1E10|| 10 || 2+1/3+1/3 || SOITEC || &nbsp; || &nbsp; || &nbsp; ||
 |-
-| 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || 25 || SOITEC || Ask Sudha, 8" || &nbsp; || Femto Lab ||
+| 1N43222.1 || 675 || 1 || 0.7 || <1E14 p type|| na || 25 || 19 || SOITEC || Ask Sudha, 8" || &nbsp; || Femto Lab ||
 |-
 | &nbsp; || 675 || 3 || 1 || 0.25um 1E14 p type|| 0.75um 1E10|| 10 || 7+1/2+1/2 || SOITEC || &nbsp; || &nbsp; || &nbsp; ||