Difference between revisions of "E-Beam Lithography (EBL)"
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* [[media:Proximity Effect Correction for Electron Beam Lithography2.ppt|Proximity Effect Correction Experiment]] | * [[media:Proximity Effect Correction for Electron Beam Lithography2.ppt|Proximity Effect Correction Experiment]] | ||
| − | Process overview: [[file:SWEEPER4-1_v4.ppt]] | + | Process overview: [[file:SWEEPER4-1_v4.ppt]]<BR> |
| − | SEMs of Pure ZEP dosage array: [[file:Pure ZEP SEMs.zip]] | + | SEMs of Pure ZEP dosage array: [[file:Pure ZEP SEMs.zip]]<BR> |
| − | SEMs of 2:1 ZEP dosage array: [[file:2_to_1 ZEP SEMs.zip]] | + | SEMs of 2:1 ZEP dosage array: [[file:2_to_1 ZEP SEMs.zip]]<BR> |
login to BEAMER server: | login to BEAMER server: | ||
Revision as of 15:34, 20 February 2013
Proximity Correction
Process overview: File:SWEEPER4-1 v4.ppt
SEMs of Pure ZEP dosage array: File:Pure ZEP SEMs.zip
SEMs of 2:1 ZEP dosage array: File:2 to 1 ZEP SEMs.zip
login to BEAMER server:
128.111.192.142
u:bowers
p:femto
Run a monte carlo simulation of the "substrate" and resist you are using in MC^3.
For example: ZEP(2k) on 500nm SOI with 1um BOx.
1) Use the drop down tab to select PENELOPE.
2) Build your layer stack in the PELELOPE GUI. z-Resolution must be an integer multiple of the thickness.
3) Check Save the result for the resist layer, for this example we have saved the "ZEP520_" layer
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