Difference between revisions of "Wafer Table (old)"
From OptoelectronicsWiki
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! Wafer ID !! PL(nm) !! Data and spec-sheet !! # bought !! # remaining !! Supplier !! Note | ! Wafer ID !! PL(nm) !! Data and spec-sheet !! # bought !! # remaining !! Supplier !! Note | ||
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− | | GLDA0908271-C || 1545 || || 5 || 3 || LandMark || LASOR/PhASER 200nm SCH with center QW | + | | GLDA0908271-C || 1545 || || 5 || 3 || LandMark || LASOR/PhASER 200nm SCH with center QW |
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Revision as of 13:32, 2 April 2010
Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Doped Si | Undoped Si | # bought | # remaining | Supplier | Note |
---|---|---|---|---|---|---|---|---|---|
1I29437.1 | 675 | 1 | 0.7 | 0.2um 1E14 B | 0.5um 1E10 | 21 | 18 | SOITEC+LSRL | |
1I29437.1 | 675 | 1 | 0.4 | 0.2um 1E14 B | 0.2um 1E10 | 4 | 0 | SOITEC+LSRL | |
1H74447.1 | 675 | 1 | 0.7 | 0.3um 1E14 p type | 0.4um 1E10 | 10 | 2+1/3+1/3 | SOITEC | |
1H74447.1 | 675 | 1 | 0.6 | 0.3um 1E14 p type | 0.6um 1E10 | 5 | 3 | SOITEC | |
1H74447.1 | 675 | 1 | 0.55 | 0.3um 1E14 p type | 0.25um 1E10 | 10 | 3 | SOITEC | |
1G47090.1 | 675 | 1 | 1 | 0.3um 1E14 p type | 0.7um 1E10 | 10 | 2 | SOITEC | |
675 | 3 | 1 | 0.25um 1E14 p type | 0.75um 1E10 | 10 | 7+1/2+1/2 | SOITEC |
Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Details of device layer | Rib Etch (um) | # bought | # remaining | Supplier | Note |
---|---|---|---|---|---|---|---|---|---|
H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1/4 | umonyx/Intel | LASOR/PhASER | |
H4JYY8G | 1 | 0.7 | Undoped Si | 0.4 | 1 | 1 | umonyx/Intel | LASOR/PhASER | |
H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1 | umonyx/Intel | LASOR/PhASER, oxidation smooth | |
Wafer ID | PL(nm) | Data and spec-sheet | # bought | # remaining | Supplier | Note |
---|---|---|---|---|---|---|
GLDA0908271-C | 1545 | 5 | 3 | LandMark | LASOR/PhASER 200nm SCH with center QW | |