Difference between revisions of "Wafer Table (old)"

Revision as of 18:17, 29 July 2010

**SOI wafer table**
Wafer ID	Substrate(um)	BOX(um)	Device layer (um)	Doped Si	Undoped Si	# bought	# remaining	Supplier
1I29437.1	675	1	0.7	0.2um 1E14 B	0.5um 1E10	21	18	SOITEC+LSRL
1I29437.1	675	1	0.4	0.2um 1E14 B	0.2um 1E10	4	0	SOITEC+LSRL
1H74447.1	675	1	0.7	0.3um 1E14 p type	0.4um 1E10	10	2+1/3+1/3	SOITEC
1H74447.1	675	1	0.6	0.3um 1E14 p type	0.3um 1E10	5	3	SOITEC
1H74447.1	675	1	0.55	0.3um 1E14 p type	0.25um 1E10	10	3	SOITEC
1G47090.1	675	1	1	0.3um 1E14 p type	0.7um 1E10	10	2	SOITEC
	675	3	1	0.25um 1E14 p type	0.75um 1E10	10	7+1/2+1/2	SOITEC

**SOI patterned wafer table**
Wafer ID	BOX(um)	Device layer (um)	Details of device layer	Rib Etch (um)	# bought	# remaining	Supplier	Note
H4JYY8G	1	0.7	Undoped Si	0.3	1	1/4	umonyx/Intel	LASOR/PhASER
H4JYY8G	1	0.7	Undoped Si	0.4	1	1	umonyx/Intel	LASOR/PhASER
H4JYY8G	1	0.7	Undoped Si	0.3	1	1	umonyx/Intel	LASOR/PhASER, oxidation smooth

**III/V wafer table**
Wafer ID	PL(nm)	# bought	# remaining	Supplier	Note
GLDA0908271-C	1545	5	3	LandMark	LASOR/PhASER 200nm SCH with center QW

**Silicon wafer table**
Wafer ID	Diameter (inches)	Thickness (um)	Orientation	Dopant Species	Resistivity (ohm-cm)	# bought	# remaining	Supplier	Note
n/a	4	500	100	As	0.001 - 0.005	25	25	University Wafer	CEEM - Si Nanowires
n/a	3	380	111	Sb	0.019 - 0.025	20	20	University Wafer	CEEM - Si Nanowires

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 |-
+|}
+----
+{| border="3"
+|+ '''Silicon wafer table'''
+|- style="background:orange; color:white"
+! Wafer ID !! Diameter (inches) !! Thickness (um) !! Orientation !! Dopant Species !! Resistivity (ohm-cm) !!# bought !! # remaining !! Supplier !! Note
+|-
+| n/a || 4 || 500 || 100 || As || 0.001 - 0.005 || 25 || 25 || University Wafer || CEEM - Si Nanowires
+|-
+| n/a || 3 || 380 || 111 || Sb || 0.019 - 0.025 || 20 || 20 || University Wafer || CEEM - Si Nanowires
+|-
 |}