Difference between revisions of "Wafer Table (old)"
From OptoelectronicsWiki
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! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Details of device layer !! Rib Etch (um) !!# bought !! # remaining !! Supplier !! Note | ! Wafer ID !! Substrate(um) !! BOX(um) !! Device layer (um) !! Details of device layer !! Rib Etch (um) !!# bought !! # remaining !! Supplier !! Note | ||
|- | |- | ||
| − | | H4JYY8G || || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1/4 || | + | | H4JYY8G || || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1/4 || Numonyx/Intel || LASOR/PhASER |
|- | |- | ||
| − | | H4JYY8G || || 1 || 0.7 || Undoped Si || 0.4 || 1 || 1 || | + | | H4JYY8G || || 1 || 0.7 || Undoped Si || 0.4 || 1 || 1 || Numonyx/Intel || LASOR/PhASER |
|- | |- | ||
| − | | H4JYY8G || || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1 || | + | | H4JYY8G || || 1 || 0.7 || Undoped Si || 0.3 || 1 || 1 || Numonyx/Intel || LASOR/PhASER, oxidation smooth |
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Revision as of 18:04, 23 March 2011
| Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Doped Si | Undoped Si | # bought | # remaining | Supplier | Note | User/# needed |
|---|---|---|---|---|---|---|---|---|---|---|
| 1M22349.1 | 799 | 1 | 1.5 | B | P | 10 | 9.5 | SOITEC | 8" diameter | |
| 1I29437.1 | 675 | 1 | 0.7 | 0.2um 1E14 B | 0.5um 1E10 | 21 | 10 | SOITEC+LSRL | ||
| 1I29437.1 | 675 | 1 | 0.4 | 0.2um 1E14 B | 0.2um 1E10 | 4 | 0 | SOITEC+LSRL | ||
| 1H74447.1 | 675 | 1 | 0.7 | 0.3um 1E14 p type | 0.4um 1E10 | 10 | 2+1/3+1/3 | SOITEC | ||
| 1H74447.1 | 675 | 1 | 0.6 | 0.3um 1E14 p type | 0.3um 1E10 | 5 | 3 | SOITEC | ||
| 1H74447.1 | 675 | 1 | 0.55 | 0.3um 1E14 p type | 0.25um 1E10 | 10 | 3 | SOITEC | ||
| 1G47090.1 | 675 | 1 | 1 | 0.3um 1E14 p type | 0.7um 1E10 | 10 | 2 | SOITEC | ||
| 675 | 3 | 1 | 0.25um 1E14 p type | 0.75um 1E10 | 10 | 7+1/2+1/2 | SOITEC |
| Wafer ID | Substrate(um) | BOX(um) | Device layer (um) | Details of device layer | Rib Etch (um) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|---|---|
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1/4 | Numonyx/Intel | LASOR/PhASER | |
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.4 | 1 | 1 | Numonyx/Intel | LASOR/PhASER | |
| H4JYY8G | 1 | 0.7 | Undoped Si | 0.3 | 1 | 1 | Numonyx/Intel | LASOR/PhASER, oxidation smooth | |
| Wafer ID | PL(nm) | Data and spec-sheet | Size (in) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|
| GLDA0908271-C | 1545 | 2 | 5 | 1? | LandMark | LASOR/PhASER 200nm SCH with center QW | |
| PULSAR1 | ~1030 | 3 | 2.75 | 1.5 | LandMark | PULSAR | |
| PULSAR2 | ~1030 | 3 | 2 | 1.5 | LandMark | PULSAR | |
| Wafer ID | Diameter (inches) | Thickness (um) | Orientation | Dopant Species | Resistivity (ohm-cm) | # bought | # remaining | Supplier | Note |
|---|---|---|---|---|---|---|---|---|---|
| n/a | 4 | 500 | 100 | As | 0.001 - 0.005 | 25 | 25 | University Wafer | CEEM - Si Nanowires |
| n/a | 3 | 380 | 111 | Sb | 0.019 - 0.025 | 20 | 20 | University Wafer | CEEM - Si Nanowires |
