Via definition
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Current Processes
15. Via 15.1. Via litho (Via mask) 15.1.1. Solvent clean 15.1.1.1. Ace, ISO, DI 15.1.2. PE2 O2 descum 15.1.2.1. 300 mT, 100 W, 1 min 15.1.3. Dehydration bake 15.1.3.1. 5 min @ 150 C 15.1.4. Spin resist 15.1.4.1. Blow sample with N2 15.1.4.2. Dispense SU8 15.1.4.3. 10 sec @ 500 (100 rpm ramp), 30 sec @ 3K (300 rpm ramp) 15.1.4.4. Bake for 2 min @ 95 C 15.1.5. Expose in stepper 15.1.5.1. 0.5 sec, offset: -12 15.1.6. Bake for 1 min @ 95 C 15.1.7. Develop in Su 8 developer 15.1.7.1. Dip and shake for 60 sec, pipet for 15 sec 15.1.8. ISO, DI 15.1.9. PE2 O2 descum 15.1.9.1. 300 mT, 100 W, 1 min 15.1.10. Inspect Via for opening. If not open, do 30 sec descums until open. 15.2. SU8 curing 15.2.1. Start @ 95 C 15.2.2. 5 min @ 150 C 15.2.3. 5 min @ 205 C 15.2.4. 30 min @ 260 C 15.2.5. 5 min @ 205 C 15.2.6. 5 min @ 150 C 15.2.7. Ramp to 95 C and let cool. 15.2.8. Descum/CF4/Descum: 30/30/15 sec 15.2.9. PE2 O2 descum 15.2.9.1. 300 mT, 200 W, 5 min 15.3. SiN deposition 15.3.1. Deposit 3000A of SiN 15.4. Litho (Via mask) 15.4.1. Solvent clean 15.4.1.1. Ace, ISO, DI 15.4.2. PE2 O2 descum 15.4.2.1. 300 mT, 100 W, 1 min 15.4.3. Dehydration bake
15.4.3.1. 5 min @ 150 C 15.4.4. Spin resist 15.4.4.1. Blow sample with N2 15.4.4.2. Dispense HMDS 15.4.4.3. Spin for 30 sec @ 3K 15.4.4.4. Blow sample with N2 15.4.4.5. Dispense nLOF2020 15.4.4.6. Spin for 30 sec @ 3K 15.4.4.7. Bake for 60 sec @ 110 C 15.4.4.8. Expose in stepper 15.4.4.8.1. 0.11 sec, offset: -12 15.4.5. Bake for 90 sec @ 110C 15.4.6. Develop in AZ300MIF for 1 min 15.5. SiN etch in PE2 (3000A via adhesion + 3000A implant HM) 15.5.1. Descum/CF4/Descum: 1/8.5/1 min
Process Development Summary
2.1 Dose/Duty Cycle Analysis with Proximity Effect Observations
Future Untested Processes
3.1 Sweeper Two Etch Depth Grating Process (INCOMPLETE)