SOI grating definition

Back to Process_Hybrid_Silicon.

Past Processes

Sweeper Vertical Grating Coupler Process

   Pre-clean: Remove native oxide and/or dielectric hardmask
       HF dip
   Ebeam PR spin coat (2:1 ZEP)
       ACE,ISO,DI   
       PEII - O2 Descum (100W, 300mTorr, 60sec)   
       Dehydration Bake (150C, 5min)   
       N2 Gun (1min)    Cools and cleans wafer
       Spin 2:1 ZEP (3000rpm, 30sec) - Recipe 5    ~225nm, Use a filtered syringe
       Pre-Exposure Bake (180C, 4min)    Cover hotplate top to prevent additional particulate
   Thermal Au Evaporation       
       Evaporate 11nm Au
   Ebeam Writing Conditions       
       4th Lens   
       Dose 350uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches if the substrate is not highly doped)
   Development       
       Remove Au in wet Au etchant    10s
       DI Rinse   
       N2 Dry   
       1:1 MIBK:ISO Development - 60s    Use a fresh batch
       9:1 MIBK:ISO Rinse - 15s    DO NOT RINSE WITH DI
       N2 Dry    DO NOT RINSE WITH DI
   Grating Etch       
       AFM etch depth calibration recommended   
       Single Step Bosch Etch Process - JTB_GR
       Rates:
       ~170nm/min w/o Sanovac 5
       ~141nm/min w/ Sanovac 5
   Strip ZEP (2:1)
       1165 Soak at 80C - 10min
       PEII - O2 Descum (100W, 300mTorr, 60sec)

Standard Hybrid Si Process

link to .xls

Process Development Summary

Dose/Duty Cycle Analysis with Proximity Effect Observations

File:2010-03-01 Grating Update.pptx

File:2010-12-07 Grating Update.pptx

Future Untested Processes

Sweeper Two Etch Depth Grating Process (UNTESTED)

   Oxide Hardmask Deposition - Advanced Vacuum PECVD 
       44nm Oxide
   Ebeam PR spin coat (2:1 ZEP)
       ACE,ISO,DI   
       PEII - O2 Descum (100W, 300mTorr, 30sec)   
       Dehydration Bake (150C, 5min)   
       N2 Gun (1min)    Cools and cleans wafer
       HMDS 5000rpm 30s
       Spin 2:1 ZEP (3000rpm, 30sec) - Recipe 5    ~225nm, Use a filtered syringe
       Pre-Exposure Bake (180C, 4min)    Cover hotplate top to prevent additional particulate
   Conductive polymer spin coat
       Aquasave (3000 rpm, 30sec) - Recipe 5
       Pre-Exposure bake (90C, 30sec)
   Ebeam Writing Conditions       
       4th Lens - 2nA  
       Dose 400uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches if the substrate is not highly doped)
   Development       
       DI Rinse - 60s Removes Aquasave   
       N2 Dry   
       1:1 MIBK:ISO Development - 60s    Use a fresh batch
       9:1 MIBK:ISO Rinse - 15s    DO NOT RINSE WITH DI
       N2 Dry    DO NOT RINSE WITH DI
   AFM Pattern Acknowledgement - Save grating cross-sections for sweeper and DBR types   
   Hardmask Etch - ICP#2
       O2 Clean - 10min
       2min season - ICP#2 CF4/CHF3/02 - 5/35/10sccm recipe 104 - 500Wicp, 50Wccp, 0.5Pa
       Oxide Nano Etch - ~110nm/min - 29sec for 44nm AV PECVD Oxide - ICP#2 CF4/CHF3/02 - 5/35/10sccm recipe 104 - 500Wicp, 50Wccp, 0.5Pa
   Grating Shallow Etch - Si Deep RIE Etcher (50nm)        
       O2 Clean - 30min - Click standby, then enter manual mode. (the electrode temp must be with in bounds to enter standby mode)Load Clean wafer. Parameters 10C,30mTorr,He=10,Ar=10,O2=30,Power RF2=800
       2min season - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W
       Single step Bosch etch process - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W
           Rates: ZEP ~ 40nm/min, Si ~170nm/min w/o Sanovac 5, ~141nm/min w/ Sanovac 5    
   Add GRAT1 layer (Protects Sweeper gratings)
       Spin AZ4210 (4000rpm, 30sec)
       Pre-Exposure Bake (95C, 1min)
       Lithography - Pattern a window in the deep etch region 
           Litho Tool: GCA Stepper / Autostepper
           Exposure: 3sec / 1sec 
           Focus Offset: 0
           NO POST-EXPOSURE BAKE
           Develop (AZ400K 1:4 diluted, 2min)
           DI Rinse
   AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure HOLD IF BOTTOMS ARE DIRTY(NOT FLAT)   
   Grating Finish Deep Etch - Etch the difference in depths (deep target - shallow target)      
           AFM etch depth calibration recommended   
           O2 Clean - 30min - Click standby, then enter manual mode. (the electrode temp must be with in bounds to enter standby mode) Load Clean wafer. Parameters 10C,30 mTorr,He=10,Ar=10,O2=30,Power RF2=800
           2min season - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W
           Single step Bosch etch process - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W
               Rates: ZEP ~ 40nm/min, Si ~170nm/min w/o Sanovac 5, ~141nm/min w/ Sanovac 5
   AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure shallow and deep  
   Strip PR & ZEP (2:1)
       1165 Soak at 80C - 10min
       PEII - O2 Descum (100W, 300mTorr, 60sec)
   AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure shallow and deep  
   SEM - Save top down SEMs for different locations and different grating types.