SOI grating definition
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Revision as of 00:04, 21 December 2011 by 169.231.33.246 (Talk)
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Contents
Past Processes
Sweeper Vertical Grating Coupler Process
Pre-clean: Remove native oxide and/or dielectric hardmask HF dip Ebeam PR spin coat (2:1 ZEP) ACE,ISO,DI PEII - O2 Descum (100W, 300mTorr, 60sec) Dehydration Bake (150C, 5min) N2 Gun (1min) Cools and cleans wafer Spin 2:1 ZEP (3000rpm, 30sec) - Recipe 5 ~225nm, Use a filtered syringe Pre-Exposure Bake (180C, 4min) Cover hotplate top to prevent additional particulate Thermal Au Evaporation Evaporate 11nm Au Ebeam Writing Conditions 4th Lens Dose 350uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches if the substrate is not highly doped) Development Remove Au in wet Au etchant 10s DI Rinse N2 Dry 1:1 MIBK:ISO Development - 60s Use a fresh batch 9:1 MIBK:ISO Rinse - 15s DO NOT RINSE WITH DI N2 Dry DO NOT RINSE WITH DI Grating Etch AFM etch depth calibration recommended Single Step Bosch Etch Process - JTB_GR Rates: ~170nm/min w/o Sanovac 5 ~141nm/min w/ Sanovac 5 Strip ZEP (2:1) 1165 Soak at 80C - 10min PEII - O2 Descum (100W, 300mTorr, 60sec)
Standard Hybrid Si Process
link to .xls
Process Development Summary
Dose/Duty Cycle Analysis with Proximity Effect Observations
File:2010-03-01 Grating Update.pptx
File:2010-12-07 Grating Update.pptx
Future Untested Processes
Sweeper Two Etch Depth Grating Process (UNTESTED)
Oxide Hardmask Deposition - Advanced Vacuum PECVD 44nm Oxide Ebeam PR spin coat (2:1 ZEP) ACE,ISO,DI PEII - O2 Descum (100W, 300mTorr, 30sec) Dehydration Bake (150C, 5min) N2 Gun (1min) Cools and cleans wafer HMDS 5000rpm 30s Spin 2:1 ZEP (3000rpm, 30sec) - Recipe 5 ~225nm, Use a filtered syringe Pre-Exposure Bake (180C, 4min) Cover hotplate top to prevent additional particulate Conductive polymer spin coat Aquasave (3000 rpm, 30sec) - Recipe 5 Pre-Exposure bake (90C, 30sec) Ebeam Writing Conditions 4th Lens Dose 400uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches if the substrate is not highly doped) Development DI Rinse - 60s Removes Aquasave N2 Dry 1:1 MIBK:ISO Development - 60s Use a fresh batch 9:1 MIBK:ISO Rinse - 15s DO NOT RINSE WITH DI N2 Dry DO NOT RINSE WITH DI AFM Pattern Acknowledgement - Save grating cross-sections for sweeper and DBR types Hardmask Etch - ICP#2 O2 Clean - 10min 2min season - ICP#2 CF4/CHF3/02 - 5/35/10sccm recipe 104 - 500Wicp, 50Wccp, 0.5Pa Oxide Nano Etch - ~110nm/min - 29sec for 44nm AV PECVD Oxide - ICP#2 CF4/CHF3/02 - 5/35/10sccm recipe 104 - 500Wicp, 50Wccp, 0.5Pa Grating Shallow Etch - Si Deep RIE Etcher (50nm) O2 Clean - 30min 2min season - ICP#2 CF4/CHF3/02 - NEED TO ADD CHEMS AND FLOWS Use Sanovac 5 and 525um 4" Si wafer Single step Bosch etch process - BOV_J_01 - NEED TO ADD CHEMS AND FLOWS Rates: ~170nm/min w/o Sanovac 5, ~141nm/min w/ Sanovac 5 Add GRAT1 layer (Protects Sweeper gratings) Spin AZ4210 (4000rpm, 30sec) Pre-Exposure Bake (95C, 1min) Lithography - Pattern a window in the deep etch region Litho Tool: GCA Stepper / Autostepper Exposure: 3sec / 1sec Focus Offset: 0 NO POST-EXPOSURE BAKE Develop (AZ400K 1:4 diluted, 2min) DI Rinse AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure HOLD IF BOTTOMS ARE DIRTY(NOT FLAT) Grating Finish Deep Etch - Etch the difference in depths (deep target - shallow target) AFM etch depth calibration recommended O2 Clean - 30min 2min season (CHEMS AND FLOWS NEEDED) Single step Bosch etch process - JTB_GR Rates: ~170nm/min w/o Sanovac 5, ~141nm/min w/ Sanovac 5 AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure shallow and deep Strip PR & ZEP (2:1) 1165 Soak at 80C - 10min PEII - O2 Descum (100W, 300mTorr, 60sec) AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure shallow and deep SEM - Save top down SEMs for different locations and different grating types.