E-beam Litho recipe

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ZEP 520A positive resist

1)spin HMDS 5000 rpm 30sec 2)spin ZEP 520A 5000rmp 30sec (~300nm) 3)softbake 180C 5min 4)Exposure dosage: 450 uC/cm2 5)Develpment:

 MIBK:Iso=1:1 , 60sec
 MIBK:Iso=9:1 , 20sec

6)Si etch in DRIE chamber

  recipe:MITB_01
  C4F8/SF6/Ar=56/24/20sccm
  ICP/CCP power=850W/18W
  Pressure= 19mT
  Temperature:10C/40C
  Etch rate: ZEP: 37nm/min
             Silicon: 100nm/min

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